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首页> 外文期刊>Quantum Electronics, IEEE Journal of >InGaAs/InP Single-Photon Avalanche Diode With Reduced Afterpulsing and Sharp Timing Response With 30 ps Tail
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InGaAs/InP Single-Photon Avalanche Diode With Reduced Afterpulsing and Sharp Timing Response With 30 ps Tail

机译：InGaAs / InP单光子雪崩二极管具有降低的后脉冲和30 ps尾巴的快速时序响应

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摘要

In this paper, we present the design, fabrication, and experimental characterization of a new Single-Photon Avalanche Diode (SPAD) made in InGaAs/InP for photon-counting operations up to 1700 nm. Working in gated-mode at 225 K with 5 V excess bias, this detector shows very low afterpulsing, hence the hold-off time can be set as low as a few microseconds, thus allowing high photon-counting rates (towards 1 Mcps). The timing response has a full-width at half maximum of less than 90 ps and a full-width at 1/1000 of maximum of less than 450 ps, thanks to a very fast (30 ps) exponential tail, thus allowing extremely wide dynamic ranges in time-correlated single photon counting measurements. Furthermore, such InGaAs/InP SPAD shows good photon detection efficiency ( ${>}{25%}$ at 1550 nm and 40% at 1000 nm) at a moderately low dark count rate, below 100 kcps for a 25 $mu{rm m}$ active-area diameter detector. These good results are due to design and fabrication optimization.
机译：在本文中，我们介绍了用InGaAs / InP制造的新型单光子雪崩二极管（SPAD）的设计，制造和实验特性，该器件可用于高达1700 nm的光子计数操作。该检测器在225 K的门控模式下具有5 V的过大偏置，显示出非常低的后脉冲，因此可将延迟时间设置为几微秒，从而实现高光子计数率（接近1 Mcps）。由于非常快的（30 ps）指数尾部，定时响应的半高全宽小于90 ps，最大1/1000全宽小于450 ps，因此动态范围极广时间相关的单光子计数测量的范围。此外，这样的InGaAs / InP SPAD在中等低的暗计数率下（对于25μmu{rm而言低于100 kcps）显示出良好的光子检测效率（在1550 nm处为$ {>} {25％} $，在1000 nm处为40％）。 m} $活动区域直径检测器。这些良好的结果归因于设计和制造的优化。

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