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首页> 外文期刊>IEEE Journal of Quantum Electronics >Novel Closed-Form Model for Multiple-State Quantum-Dot Semiconductor Optical Amplifiers
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Novel Closed-Form Model for Multiple-State Quantum-Dot Semiconductor Optical Amplifiers

机译：多态量子点半导体光放大器的新型闭合形式模型

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摘要

Novel closed-form model for multiple-state quantum-dot semiconductor optical amplifiers (QD-SOAs) is derived. The model takes into account the effect of the ground state, excited state and the wetting layer. The model is simple, accurate and exhibits negligible computational time compared with numerical simulation. In addition, the derived model is valid for arbitrary applied current and input photon density and is interesting for device design and optimization. Analytical expressions for the optical gain, effective saturation density, maximum output density and the transparency current are also derived. Our model revealed that the effective saturation density of QD-SOAs strongly depends on the photon density and the applied current.
机译：推导了新型的多态量子点半导体光放大器（QD-SOA）的封闭形式模型。该模型考虑了基态，激发态和润湿层的影响。该模型简单，准确，与数值模拟相比，计算时间可忽略不计。此外，导出的模型对于任意施加的电流和输入光子密度均有效，并且对于器件设计和优化很有意义。还得出了光学增益，有效饱和密度，最大输出密度和透明电流的解析表达式。我们的模型表明，QD-SOA的有效饱和密度很大程度上取决于光子密度和施加的电流。

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