First Near-Ultraviolet- and Blue-Enhanced Backside-Illuminated Single-Photon Avalanche Diode Based on Standard SOI CMOS Technology

著录项

• 来源
  《IEEE journal of selected topics in quantum electronics》 |2019年第5期|1-6|共6页
• 作者

  Lee Myung-Jae; Sun Pengfei; Pandraud Gregory; Bruschini Claudio; Charbon Edoardo;

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• 作者单位

  Korea Inst Sci & Technol, Post Silicon Semicond Inst, Seoul 02792, South Korea;

  Delft Univ Technol, Delft Inst Microsyst & Nanoelect, Else Kooi Lab, NL-2628 CT Delft, Netherlands;

  Delft Univ Technol, Delft Inst Microsyst & Nanoelect, Else Kooi Lab, NL-2628 CT Delft, Netherlands;

  Ecole Polytech Fed Lausanne, Inst Microengn, CH-2002 Neuchatel, Switzerland;

  Ecole Polytech Fed Lausanne, Inst Microengn, CH-2002 Neuchatel, Switzerland;

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• 收录信息
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  Avalanche photodiode (APD); backside etching; backside illumination (BSI); blue; buried oxide (BOX); CMOS image sensor; detector; electronic photonic integration; Geiger-mode avalanche photodiode (G-APD); high-volume manufacturing; integrated optics device; integration of photonics in standard CMOS technology; near infrared (NIR); near ultraviolet (NUV); optical sensing; optical sensor; photodetector; photodiode; photomultiplier; photon counting; photon timing; RGB-D sensor; semiconductor; sensor; silicon; silicon on insulator (SOI); single-photon avalanche diode (SPAD); single-photon imaging; standard CMOS technology; uniformity;

  机译：雪崩光电二极管（APD）;背面蚀刻;背面照明（BSI）;蓝色;埋地氧化物（盒子）;CMOS图像传感器;探测器;电子光子集成;Geiger-Mode雪崩光电二极管（G-APD）;综合光学设备;在标准CMOS技术中的光子学集成;近红外线（NIR）;光学传感;光学传感器;光电探测器;光电二极管;光电倍数;光子计数;RGB-D传感器;半导体;硅;绝缘体上的硅（SOI）;单光子雪崩二极管（SPAD）;单光子成像;标准CMOS技术;均匀性;