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首页> 外文期刊>IEEE journal of selected topics in quantum electronics >Integration of semiconductor laser amplifiers with sampled grating tunable lasers for WDM applications
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Integration of semiconductor laser amplifiers with sampled grating tunable lasers for WDM applications

机译：半导体激光放大器与采样光栅可调激光器的集成，可用于WDM应用

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A semiconductor laser amplifier is integrated with a sample grating distributed Bragg reflector (SGDBR) laser to act as an external modulator. The fabrication, characterization, and device characteristics of this integrated tunable transmitter are reported. The integrated tunable laser can have up to 75 nm of tuning range and more than 30 dB of side-mode suppression ratio (SMSR). The integrated amplifier can provide at most 8 dB of gain and more than 25 dB of contrast ratio for all the channels. Its RF modulation bandwidth can achieve 1.5 GHz, and the dynamic chirp is as good as a directly modulated laser. A simple model is proposed to explain the measured modulation responses and gain saturation is found to be the main cause of the resonant peaks in the dynamics.
机译：半导体激光放大器与样本光栅分布式布拉格反射器（SGDBR）激光器集成在一起，用作外部调制器。报告了这种集成可调发射机的制造，表征和设备特性。集成的可调激光器可具有高达75 nm的调谐范围和超过30 dB的侧模抑制比（SMSR）。集成放大器可为所有通道提供最多8 dB的增益和超过25 dB的对比度。它的RF调制带宽可以达到1.5 GHz，动态chi与直接调制的激光一样好。提出了一个简单的模型来解释测得的调制响应，并且发现增益饱和是动力学中共振峰的主要原因。

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