首页> 外文期刊>IEEE Microwave and Guided Wave Letters >Monolithic GaAs phase shifter circuit with low insertion loss and continuous 0-360/spl deg/ phase shift at 20 GHz
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Monolithic GaAs phase shifter circuit with low insertion loss and continuous 0-360/spl deg/ phase shift at 20 GHz

机译:具有低插入损耗和20 GHz连续0-360 / spl deg /相移的单片GaAs移相器电路

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摘要

We present here a circuit capable of continuous 0-360/spl deg/ phase shift at 20 GHz with only 4.2 dB of insertion loss. The phase shifter employs a variable velocity transmission line obtained by periodically loading a coplanar waveguide (CPW) line with GaAs Schottky diodes. The circuit is fabricated on GaAs using monolithic fabrication techniques that are compatible with commercial GaAs foundry processes. To the best of our knowledge, this circuit has the lowest reported insertion loss for a monolithic solid state phase shifter operating at 20 GHz.
机译:我们在这里介绍的电路能够在20 GHz下连续0-360 / spl deg /相移,插入损耗仅为4.2 dB。移相器采用了变速传输线,该传输线通过定期用GaAs肖特基二极管加载共面波导(CPW)线而获得。使用与商业GaAs铸造工艺兼容的单片制造技术在GaAs上制造电路。据我们所知,该电路在20 GHz频率下的单片固态移相器的插入损耗最低。

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