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首页> 外文期刊>IEEE Microwave and Guided Wave Letters >A novel approach to extracting small-signal model parameters of silicon MOSFET's
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A novel approach to extracting small-signal model parameters of silicon MOSFET's

机译：一种提取硅MOSFET的小信号模型参数的新颖方法

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摘要

We present a simple and accurate method to extract a small-signal equivalent circuit model of Si MOSFET's, based on the novel approach to determining parasitic inductances and resistances by fitting the frequency response of new analytic expressions with Z-parameters. This method is proposed to overcome the serious problem that conventional cold-FET methods cannot be applied for MOSFET's, and is also superior to the traditional optimization of the entire model parameters to fit the measured S-parameters. In particular, this technique is simple and reliable because no additional measurements are needed. The excellent correspondence is achieved between modeled and measured S-parameters from 0.5 to 39.5 GHz.
机译：我们提出了一种简单准确的方法来提取Si MOSFET的小信号等效电路模型，该方法基于通过将新解析表达式的频率响应与Z参数拟合来确定寄生电感和电阻的新颖方法。提出该方法是为了克服严重的问题，即传统的冷FET方法无法应用于MOSFET，并且优于整个模型参数的传统优化，以适合所测量的S参数。特别是，此技术简单可靠，因为不需要其他测量。在0.5至39.5 GHz的建模S参数和测量S参数之间实现了出色的对应关系。

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