Comparison of microwave inductors fabricated on silicon-on-sapphire and bulk silicon

Johnson R.A.; Chang C.E.

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Comparison of microwave inductors fabricated on silicon-on-sapphire and bulk silicon

机译：在蓝宝石硅和块状硅上制造的微波电感器的比较

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Inductors are important elements of microwave circuits that frequently require high self-resonant frequencies and high quality factors. In this work, circular spiral inductors fabricated on silicon-on-sapphire (SOS) and bulk silicon are compared. Due to the low-loss dielectric substrate, SOS inductors showed both higher self-resonant frequencies and higher quality factors than those fabricated on bulk silicon. Small-signal models extracted for the inductors confirm that the degradation of the inductor characteristics in bulk silicon stems from losses in the substrate.

机译：电感器是经常需要高自谐振频率和高质量因数的微波电路的重要元件。在这项工作中，比较了在蓝宝石硅（SOS）和块状硅上制造的圆形螺旋电感器。由于低损耗的介电基片，SOS电感器比在体硅上制造的电感器显示出更高的自谐振频率和更高的品质因数。为电感器提取的小信号模型证实，大块硅中电感器特性的下降源于衬底的损耗。

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《IEEE Microwave and Guided Wave Letters》 |1996年第9期|P.323-325|共3页
作者
Johnson R.A.; Chang C.E.;
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正文语种 eng
中图分类无线电电子学、电信技术;
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专利

1. Microwave performance of optically fabricated T-gate thin film silicon-on-sapphire based MOSFET's [J] . de la Houssaye P.R., Chang C.E. IEEE Electron Device Letters . 1995,第6期

机译：光学制造的T型栅极薄膜蓝宝石上的MOSFET的微波性能
2. Empirical Design Consideration of the Q-Factor of On-Chip Square Spiral Inductors on Silicon-On-Sapphire [J] . BO YANG, EFSTRATIOS SKAFIDAS, ROB EVANS WSEAS Transactions on Circuits and Systems . 2006,第5期

机译：蓝宝石硅片上方形螺旋电感器Q因子的经验设计考虑
3. Flicker noise behavior of MOSFETs fabricated in 0.5 /spl mu/m fully depleted (FD) silicon-on-sapphire (SOS) CMOS in weak, moderate, and strong inversion [J] . Ericson M.N., Britton C.L. Jr., Rochelle J.M., IEEE Transactions on Nuclear Science . 2003,第4期

机译：以0.5 / splμm/ m的全耗尽（FD）蓝宝石硅（SOS）CMOS制成的MOSFET的闪变噪声行为呈弱，中和强反转状态
4. Microwave characterization of sub-micron n- and p-channel MOSFETs fabricated with thin film Silicon-on-Sapphire [C] . Chang, C.E., Asbeck, . 1994

机译：用薄膜蓝宝石硅制造的亚微米n沟道和p沟道MOSFET的微波特性
5. Silicon-on-sapphire technology for microwave power applications. [D] . Wetzel, Matthew Arthur. 2001

机译：蓝宝石硅技术，用于微波功率应用。
6. A comparison of the marginal adaptation of composite overlays fabricated with silicone and an intraoral scanner [O] . Carla García-Cuesta, Vicente Faus-Llácer, Álvaro Zubizarreta-Macho, 2021

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7. Cryogenic temperature characteristics of bulk silicon and Silicon-on-Sapphire devices [O] . Melton Steven Allen 100

机译：体硅和蓝宝石硅器件的低温特性
8. Microwave Performance of Optically Fabricated T-Gate Thin Film Silicon-on-Sapphire Based Mosfet's [R] . DeLaHoussaye, P. R., Chang, C. E., Offord, B., 1995

机译：光学制备T栅极薄膜硅基蓝宝石mosfet的微波性能

Comparison of microwave inductors fabricated on silicon-on-sapphire and bulk silicon

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