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首页> 外文期刊>IEEE Microwave and Guided Wave Letters >W-band monolithic low noise amplifiers for advanced microwave scanning radiometer
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W-band monolithic low noise amplifiers for advanced microwave scanning radiometer

机译：适用于高级微波扫描辐射计的W波段单片低噪声放大器

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摘要

Monolithic low noise amplifiers using 0.15-/spl mu/m AlGaAs-InGaAs-GaAs pseudomorphic HEMTs with a passivation film have been developed at W-band for the Advanced Microwave Scanning Radiometer. A two-stage monolithic amplifier has achieved a noise figure of 3.4 dB with a small signal gain of 8.7 dB at 91 GHz. A six-stage amplifier cascading three two-stage monolithic amplifier chips has achieved a noise figure of 4.2 dB with a small signal gain of 29.7 dB at 91 GHz. Taking into account the minimum noise figure of 2.5 dB with an associated gain of 4.3 dB of 0.15/spl times/60 /spl mu/m/sup 2/ PHEMTs at 90 GHz, these results demonstrate that a good noise matching has been successfully achieved.
机译：已在W波段为高级微波扫描辐射计开发了使用0.15- / splμm/ m AlGaAs-InGaAs-GaAs伪晶HEMT和钝化膜的单片低噪声放大器。两级单片放大器在91 GHz时的噪声系数为3.4 dB，小信号增益为8.7 dB。级联三个三级单片放大器芯片的六级放大器在91 GHz时的噪声系数为4.2 dB，小信号增益为29.7 dB。考虑到在90 GHz频率下最小噪声系数为2.5 dB且相关增益为4.3 dB 0.15 / spl times / 60 / spl mu / m / sup 2 / PHEMT，这些结果表明已成功实现了良好的噪声匹配。

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