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首页> 外文期刊>IEEE Microwave and Guided Wave Letters >A coplanar waveguide InAlAs/InGaAs HBT monolithic Ku-band VCO
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A coplanar waveguide InAlAs/InGaAs HBT monolithic Ku-band VCO

机译：共面波导InAlAs / InGaAs HBT单片Ku波段VCO

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摘要

An 18 GHz coplanar waveguide (CPW) monolithic voltage controlled oscillator (VCO) has been demonstrated using InAlAs/InGaAs HBT technology. The VCO achieves 6% frequency tuning range using a varactor diode constructed from the HBT base-emitter junction. A CPW design was employed to increase the Q-factor of the monolithic resonator as well as reduce the chip size. The VCO obtains an output power of +10/spl plusmn/0.5 dBm over the tuning range and a collector efficiency of 11.5%. A SSB phase noise of -72 and -96 dBc/Hz at 100 kHz and 1 MHz offset frequency from the carrier were achieved, respectively. This represents the first reported phase noise results of an InAlAs/InGaAs-based HBT VCO with a monolithic integrated varactor and are comparable to other MMIC HBT varactor-tuned VCO's reported in this frequency band.
机译：已经使用InAlAs / InGaAs HBT技术演示了18 GHz共面波导（CPW）单片压控振荡器（VCO）。使用由HBT基极-发射极结构成的变容二极管，VCO达到6％的频率调谐范围。采用CPW设计来增加单片谐振器的Q因子并减小芯片尺寸。 VCO在调谐范围内获得+ 10 / spl plusmn / 0.5 dBm的输出功率，集电极效率为11.5％。在相对于载波的100 kHz和1 MHz偏移频率下，分别获得了-72和-96 dBc / Hz的SSB相位噪声。这代表了首次报告的具有整体式集成变容二极管的基于InAlAs / InGaAs的HBT VCO的相位噪声结果，并且与该频段中报告的其他MMIC HBT变容二极管调谐的VCO相当。

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