Use of surface passivation ledges and local negative feedback to reduce amplitude modulation noise in AlGaAs/GaAs heterojunction bipolar transistors

Costa D.; Khatibzadeh A.

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Use of surface passivation ledges and local negative feedback to reduce amplitude modulation noise in AlGaAs/GaAs heterojunction bipolar transistors

机译：使用表面钝化壁架和局部负反馈来减少AlGaAs / GaAs异质结双极晶体管中的幅度调制噪声

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It is shown that the use of surface passivation ledges and local negative feedback with an unbypassed emitter resistance reduce the AM noise of AlGaAs/GaAs heterojunction bipolar transistors (HBT's). The simultaneous use of both techniques improves the AM noise by 9 dB at 100 Hz offset. The correspondence between reductions in baseband noise and AM noise are described.

机译：结果表明，使用表面钝化壁架和具有未旁路发射极电阻的局部负反馈可降低AlGaAs / GaAs异质结双极晶体管（HBT）的AM噪声。两种技术的同时使用可在100 Hz偏移下将AM噪声提高9 dB。描述了基带噪声减小和AM噪声减小之间的对应关系。

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《IEEE Microwave and Guided Wave Letters》 |1994年第2期|P.45-47|共3页
作者
Costa D.; Khatibzadeh A.;
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正文语种 eng
中图分类无线电电子学、电信技术;
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1. Properties of AlGaAs/GaAs heterojunction bipolar transistor with AlGaAs ledge bypass capacitor [J] . T. K. Oh, J. G. Lee, K. H. Yi Solid-State Electronics . 2002,第1期

机译：AlGaAs壁架旁路电容器的AlGaAs / GaAs异质结双极晶体管的性能
2. Design of emitter ledge for thermal stability of AlGaAs/GaAs heterojunction bipolar transistors [J] . H.W. Lim, C.H. Baek, B.K. Kang Solid-State Electronics . 2013,第mara期

机译：AlGaAs / GaAs异质结双极晶体管热稳定性的发射极壁架设计
3. Electron cyclotron resonance hydrogen and nitrogen plasma surface passivation of AlGaAs/GaAs heterojunction bipolar transistors [J] . Wang Q., Li P.W. IEEE Electron Device Letters . 1992,第2期

机译：AlGaAs / GaAs异质结双极晶体管的电子回旋共振氢和氮等离子体表面钝化
4. Design study of passivation ledge in AlGaAs/GaAs heterojunction bipolar transistors [C] . Yang-Hua Chang . 1995

机译：AlGaAs / GaAs异质结双极型晶体管钝化壁架的设计研究
5. Analysis and modeling of physical mechanisms contributing to the AlGaAs/GaAs heterojunction bipolar transistor reliability. [D] . Sheu, Shyh-Horng. 1997

机译：分析和建模有助于AlGaAs / GaAs异质结双极晶体管可靠性的物理机制。
6. Reduced Subthreshold Characteristics and Flicker Noise of an AlGaAs/InGaAs PHEMT Using Liquid Phase Deposited TiO2 as a Gate Dielectric [O] . Kai-Yuen Lam, Jung-Sheng Huang, Yong-Jie Zou, 2016

机译：使用液相沉积的TiO2作为栅介质的AlGaAs / InGaAs PHEMT的亚阈值特性和闪烁噪声降低
7. Charge storage in the quasineutral regions of Si homojunction, AlGaAs/GaAs heterojunction, and Si/SiGe heterojunction bipolar transistors [O] . J. J. Liou 1992

机译：Si同质结，AlgaAs / GaAs异质结和Si / SiGe异质结双极晶体管的拟鸣区域
8. Assessment of Noise Sources and Characteristics of AlGaAs/GaAs Heterojunction Bipolar Transistors. [R] . Tutt, N., Pavlidis, D., Bayraktaroglu, B. 1989

机译：alGaas / Gaas异质结双极晶体管的噪声源和特性评估。

Use of surface passivation ledges and local negative feedback to reduce amplitude modulation noise in AlGaAs/GaAs heterojunction bipolar transistors

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