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35-40 GHz monolithic VCOs utilizing high-speed GaInP/GaAs HBTs

机译:利用高速GaInP / GaAs HBT的35-40 GHz单片VCO

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摘要

Design, fabrication and performance of Ka-band voltage-controlled oscillators (VCOs) are described. High-speed self-aligned GaInP/GaAs heterojunction bipolar transistors (HBTs) as active devices and varactor diodes using the base-collector junction of the HBT structure are implemented in the VCOs. The HBTs have an emitter area of 2/spl times/1.5 /spl mu/m/spl times/10 /spl mu/m and incorporate a highly carbon doped base layer and a thin GaInP hole barrier. Oscillators with center frequencies of 35, 37, and 40 GHz exhibit tuning ranges of up to 1 GHz and typical output powers of 1-3.5 dBm. Best measured phase-noise at 1 MHz off carrier is -107 dBc/Hz.
机译:介绍了Ka波段压控振荡器(VCO)的设计,制造和性能。在VCO中实现了使用HBT结构的基极-集电极结作为有源器件的高速自对准GaInP / GaAs异质结双极晶体管(HBT)和变容二极管。 HBT的发射极面积为2 / spl倍/1.5/spl mu / m / spl倍/ 10 / spl mu / m,并结合了高碳掺杂的基层和薄的GaInP空穴阻挡层。中心频率为35、37和40 GHz的振荡器的调谐范围高达1 GHz,典型输出功率为1-3.5 dBm。离载波1 MHz时最佳测量的相位噪声为-107 dBc / Hz。

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