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Wideband characterization of mutual coupling between high density bonding wires

机译:高密度键合线之间互耦的宽带特性

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Mutual coupling between grounded bonding wires for high density IC packaging has been characterized over a wide frequency range using the Method of Moments in consideration of the ohmic and radiation losses. At high frequencies, the mutual inductance greatly increases due to the radiation-enhanced mutual coupling effect. For 500-/spl mu/m-long bonding wires, a minimum 200-/spl mu/m separation is required to maintain a 20-dB crosstalk level at low frequencies. This wideband analysis will be useful for designing packages and interconnection layouts of high frequency ICs with increased packaging density and operating frequency.
机译:考虑到欧姆和辐射损耗,使用矩量法已经在很宽的频率范围内表征了用于高密度IC封装的接地键合线之间的相互耦合。在高频下,由于辐射增强的互耦合效应,互感大大增加。对于500- / splμ/ m长的键合线,要求至少200- / splμ/ m的间隔才能在低频下保持20 dB的串扰水平。这种宽带分析将有助于设计具有更高封装密度和工作频率的高频IC的封装和互连布局。

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