A 0.5-watt 47-GHz power amplifier using GaAs monolithic circuits

Hegazi G.; Pande K.

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A 0.5-watt 47-GHz power amplifier using GaAs monolithic circuits

机译：使用GaAs单片电路的0.5瓦47 GHz功率放大器

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47-GHz monolithic microwave integrated circuit (MMIC) power amplifier chips have been developed using 0.35-mm gate-length molecular beam epitaxial (MBE) MESFET technology. The amplifier chips have been assembled with nominal output power of 0.4 W and 15 dB of gain. The saturated output power of this amplifier exceeded 0.5 W. This amplifier has an application as a driver for a monolithic doubler circuit to reliably produce greater than 80 mW of output power at 94 GHz for missile seeker applications.

机译：使用0.35毫米栅长分子束外延（MBE）MESFET技术开发了47 GHz单片微波集成电路（MMIC）功率放大器芯片。放大器芯片的组装额定输出功率为0.4 W，增益为15 dB。该放大器的饱和输出功率超过0.5W。该放大器可作为单片倍频器电路的驱动器，在导弹搜寻器应用中以94 GHz的频率可靠地产生80 mW以上的输出功率。

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《IEEE Microwave and Guided Wave Letters》 |1992年第2期|P.61-62|共2页
作者
Hegazi G.; Pande K.;
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正文语种 eng
中图分类无线电电子学、电信技术;
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1. Millimeter-Wave Monolithic GaAs HEMT Medium-Power Amplifier Having Low-Loss, CRC High-Pass Equalizer Circuits [J] . Naoko ONO, Ken ONODERA, Kazuhiro ARAI, IEICE Transactions on Electronics . 2004,第5期

机译：具有低损耗，CRC高通均衡器电路的毫米波单片GaAs HEMT中功率放大器
2. Design-Processing Features of Microwave GaAs Monolithic Integrated Circuits of a Low-Noise Amplifier with a Copper Metallized Frontside [J] . S. V. Ishutkin, V. A. Kagadey, E. V. Erofeev, Russian Microelectronics . 2015,第6期

机译：具有铜金属化正面的低噪声放大器的微波砷化镓单片集成电路的设计-处理特征
3. From model to low noise amplifier monolithic microwave integrated circuit: 0.03–2.6 GHz plastic quad-flat no-leads packaged Gallium-Nitride low noise amplifier monolithic microwave integrated circuit [J] . Osmanoglu Sinan, Ozbay Ekmel International journal of numerical modelling . 2021,第5期

机译：从模型到低噪声放大器单片微波集成电路：0.03-2.6 GHz塑料四扁平无铅包装镓 - 氮化物低噪声放大器单片微波集成电路
4. A miniaturized 0.5-watt Q-band 0.25-μm GaAs PHEMT high power amplifier MMIC [C] . A. Bessemoulin, P. Quentin, H. Thomas, European Microwave Conference . 2002

机译：小型化0.5瓦Q频段0.25-μmGaAs Phemt高功率放大器MMIC
5. An adaptable neuro-control system for a 10--50GHz monolithic microwave integrated circuited-based intelligent front-end amplifier. [D] . Richardson, Nathan Lawrence. 2006

机译：一种适用于10--50GHz单片微波集成电路的智能前端放大器的自适应神经控制系统。
6. High Performance and Low power Monolithic Three-Dimensional Sub-50 nm Poly Si Thin film transistor (TFTs) Circuits [O] . Tsung-Ta Wu, Wen-Hsien Huang, Chih-Chao Yang, -1

机译：高性能和低功耗单片三维3μm以下50微米多晶硅薄膜晶体管（TFT）电路
7. Test set-ups for fast measurement of monolithic integrated circuits from on-wafer to system. application to a novel GaAs monolithic transimpedance amplifier for high speed optical communication systems [O] . Dorta P., Salazar-Palma M., Casao J.A., 1992

机译：测试设置，用于快速测量从晶圆上到系统的单片集成电路。在新型GaAs单片互阻放大器中的应用
8. Monolithic Microwave Integrated Circuits (MMIC) Broadband Power Amplifiers (Part 2). [R] . J. E. Penn 2013

机译：单片微波集成电路（mmIC）宽带功率放大器（第2部分）。

A 0.5-watt 47-GHz power amplifier using GaAs monolithic circuits

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