Millimeter-wave power performance of ion-implanted In/sub x/Ga/sub (1-x)/As on GaAs metal semiconductor field-effect transistors

Feng M.; Lau C.L.

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Millimeter-wave power performance of ion-implanted In/sub x/Ga/sub (1-x)/As on GaAs metal semiconductor field-effect transistors

机译：GaAs金属半导体场效应晶体管上离子注入的In / sub x / Ga / sub（1-x）/ As的毫米波功率性能

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Millimeter-wave power performance achieved by ion-implanted InGaAs-GaAs MESFETs with a gate length of 0.25 mu m is described. When a device with a gate width of 150 mu m was measured at 22 GHz, an output power of 95 mW, a power-added efficiency of 33%, and an associated gain of 7.3 dB were observed. At an output power of 93 mW, a power-added efficiency of 25% and an associated gain of 4 dB were obtained at 44 GHz. When a device with a gate width of 200 mu m was measured at 60 GHz, an output power of 121 mW with 3-dB associated gain and 13% power-added efficiency were observed.

机译：描述了通过离子注入的InGaAs-GaAs MESFET具有0.25μm的栅极长度实现的毫米波功率性能。在22 GHz下测量栅宽为150μm的设备时，观察到输出功率为95 mW，功率附加效率为33％，相关增益为7.3 dB。在93 mW的输出功率下，在44 GHz时可获得25％的功率附加效率和4 dB的相关增益。当在60 GHz下测量栅宽为200μm的设备时，观察到121 mW的输出功率以及3dB的相关增益和13％的功率附加效率。

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《IEEE Microwave and Guided Wave Letters》 |1992年第6期|P.225-227|共3页
作者
Feng M.; Lau C.L.;
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正文语种 eng
中图分类无线电电子学、电信技术;
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Millimeter-wave power performance of ion-implanted In/sub x/Ga/sub (1-x)/As on GaAs metal semiconductor field-effect transistors

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