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V-band high-efficiency monolithic pseudomorphic HEMT power amplifiers

机译:V波段高效单片伪晶HEMT功率放大器

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摘要

V-band monolithic power amplifiers have been developed and demonstrate state-of-the-art performance. For a single-stage MMIC amplifier employing a 200- mu m pseudomorphic HEMT, 151.4 mW (757 Mw/mm) output power with 26.4% power-added efficiency at 60 GHz is achieved. Maximum power-added efficiency of 30.6% at 130-mW output power is also obtained. A three-stage MMIC amplifier utilizing the same devices demonstrated 80-mW output power, 20.5% power-added efficiency, and 17-dB associated gain at 57 GHz. The linear gain of the amplifier was 21.5 dB.
机译:V波段单片功率放大器已经开发出来,并展示了最新的性能。对于采用200μm拟态HEMT的单级MMIC放大器,在60 GHz时可获得151.4 mW(757 Mw / mm)的输出功率和26.4%的功率附加效率。在130mW的输出功率下,最大功率附加效率为30.6%。使用相同器件的三级MMIC放大器在57 GHz频率下具有80mW的输出功率,20.5%的功率附加效率以及17dB的相关增益。放大器的线性增益为21.5 dB。

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