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首页> 外文期刊>IEEE Microwave and Guided Wave Letters >Two-port FET oscillators with applications to active arrays
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Two-port FET oscillators with applications to active arrays

机译：两端口FET振荡器及其在有源阵列中的应用

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摘要

Investigations of two-port FET oscillators and their use in active arrays for spatial power combining are reported. The two-port oscillator considered consists of a single FET oscillator with distinct input and output ports. This type of oscillator exhibits increased locking bandwidth over alternative approaches. Results are given for a prototype five-element linear array operating at 6 GHz. In this case, the entire array is synchronized by a single injection signal supplied to the first oscillator. The array exhibited a locking bandwidth of greater than 500 MHz with a 0-dBm injection signal. However, the radiation pattern had sidelobe levels below -10 dB for only 300 MHz of this range. Variation of the main lobe with frequency is shown. The main lobe direction variation is about 7% per 100 MHz of frequency change.
机译：报告了对两端口FET振荡器及其在有源阵列中进行空间功率组合的研究。所考虑的两端口振荡器由具有不同输入和输出端口的单个FET振荡器组成。与其他方法相比，这种类型的振荡器具有更高的锁定带宽。给出了在6 GHz下工作的原型五元线性阵列的结果。在这种情况下，整个阵列通过提供给第一振荡器的单个注入信号进行同步。该阵列在0 dBm注入信号下表现出大于500 MHz的锁定带宽。然而，仅在该范围的300 MHz处，辐射图的旁瓣电平低于-10 dB。显示了主瓣随频率的变化。每100 MHz的频率变化，主瓣方向变化约为7％。

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