Inverse Class-F Design Using Dynamic Loadline GaN HEMT Models to Help Designers Optimize PA Efficiency [Application Notes]

Pengelly R.; Pribble W.; Smith T.

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Inverse Class-F Design Using Dynamic Loadline GaN HEMT Models to Help Designers Optimize PA Efficiency [Application Notes]

机译：使用动态负载线GaN HEMT模型进行的反向F类设计，以帮助设计人员优化PA效率[应用笔记]

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Simulation of power amplifiers (PAs) for modern wireless base station and small cell systems is an essential part of the design process. At a cell site, the PA consumes the bulk of the dc power, generates the most heat, and thus represents the greatest operational cost. Maximum PA efficiency is a necessity to manage these costs, which is a sizeable challenge in a PA that also must be highly linear to support the complex multilevel modulation types and wide bandwidths used for current and developing wireless transmission standards. Accurate simulation allows the PA designer to meet these challenges by exploring the available design options and then optimizing the circuit that is selected for the application.

机译：用于现代无线基站和小型蜂窝系统的功率放大器（PA）的仿真是设计过程的重要组成部分。在电池位置，PA消耗大量的直流电源，产生最多的热量，因此代表最大的运营成本。最大的PA效率是管理这些成本的必要条件，这对PA来说是一个巨大的挑战，PA也必须高度线性以支持当前和正在开发的无线传输标准所使用的复杂的多级调制类型和宽带宽。精确的仿真使PA设计人员可以通过探索可用的设计选项，然后优化为该应用选择的电路来应对这些挑战。

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来源
《Microwave Magazine, IEEE》 |2014年第6期|134-147|共14页
作者
Pengelly R.; Pribble W.; Smith T.;
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正文语种 eng
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关键词
Base stations; HEMT; Harmonic analysis; Integrated circuit modeling; Load modeling; Power amplifiers; Time-frequency analysis;

机译：基站;HEMT;谐波分析;集成电路建模;负载建模;功率放大器时频分析;

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1. A HIGH-EFFICIENCY INVERSE CLASS-F POWER AMPLIFIER USING GaN HEMT [J] . Hyoungjong Kim, Gilwong Choi, Jinjoo Choi Microwave and optical technology letters . 2008,第9期

机译：使用GaN HEMT的高效反相F类功率放大器
2. Highly efficient 2.7-2.9GHz class-F and inverse class-F power amplifiers in GaN HEMT technology [J] . Oguzhan Kizilbey IEICE Electronics Express . 2013,第7期

机译：GaN HEMT技术中的高效2.7-2.9GHz F类和反向F类功率放大器
3. High efficiency GaN HEMT class-F synchronous rectifier for wireless applications [J] . Sadegh Abbasian, Thomas Johnson IEICE Electronics Express . 2015,第1期

机译：适用于无线应用的高效GaN HEMT F类同步整流器
4. High efficiency and high power GaN HEMT inverse class-F synchronous rectifier for wireless power applications [C] . Abbasian Sadegh, Johnson Thomas European Microwave Conference . 2015

机译：适用于无线电力应用的高效大功率GaN HEMT反向F类同步整流器
5. X-Band Gan Mmic Inverse-F Pa Optimized for Load Modulation [D] . Martin, Daniel Nunez. 2016

机译：X波段GaN MMIC逆-F PA优化负载调制
6. An Improved Large Signal Model for 0.1 μm AlGaN/GaN High Electron Mobility Transistors (HEMTs) Process and Its Applications in Practical Monolithic Microwave Integrated Circuit (MMIC) Design in W band [O] . Junfeng Li, Shuman Mao, Yuehang Xu, 2018

机译：0.1μmAlGaN / GaN高电子迁移率晶体管（HEMT）工艺的改进大信号模型及其在W波段实用单片微波集成电路（MMIC）设计中的应用
7. Highly efficient 2.7-2.9GHz class-F and inverse class-F power amplifiers in GaN HEMT technology [O] . Oguzhan Kizilbey 2013

机译：高效2.7-2.9GHz Class-F和GaN HEMT技术中的F型功率放大器

Inverse Class-F Design Using Dynamic Loadline GaN HEMT Models to Help Designers Optimize PA Efficiency [Application Notes]

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