Arrays of optoelectronic switching nodes comprised of flip-chip-bonded MQW modulators and detectors on silicon CMOS circuitry

Lentine A.L.; Goossen K.W.

首页> 外文期刊>IEEE Photonics Technology Letters >Arrays of optoelectronic switching nodes comprised of flip-chip-bonded MQW modulators and detectors on silicon CMOS circuitry

【24h】

Arrays of optoelectronic switching nodes comprised of flip-chip-bonded MQW modulators and detectors on silicon CMOS circuitry

机译：由硅CMOS电路上的倒装芯片键合MQW调制器和检测器组成的光电开关节点阵列

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

We describe 8/spl times/8 arrays of smart pixels, designed and fabricated using MQW modulators and detectors flip-chip-solder-bonded to silicon CMOS circuits. The individual circuits implement 2 input, 1 output embedded control switching nodes. Four arrays from two different designs were fabricated and tested. For the array with the highest yield, 60 of 64 nodes functioned correctly at low speeds and were tested up to 250 Mb/s without re-adjusting individual bias voltages with the maximum speed of an individual node of 375 Mb/s. For the second-generation array, the center 4/spl times/8 section of the array was tested at data rates beyond 700 Mb/s with individual nodes having short term bit error rates below 10-/sup 11/.

机译：我们描述了8 / spl×/ 8的智能像素阵列，这些阵列是使用MQW调制器和检测器以倒装芯片焊接方式结合到硅CMOS电路而设计和制造的。各个电路实现2个输入，1个输出嵌入式控制开关节点。制作并测试了来自两种不同设计的四个阵列。对于具有最高产量的阵列，64个节点中的60个在低速下可以正常工作，并且在不重新调整单个偏置电压的情况下进行了高达250 Mb / s的测试，单个节点的最大速度为375 Mb / s。对于第二代阵列，以超过700 Mb / s的数据速率测试了阵列的中心4 / spl times / 8部分，单个节点的短期误码率低于10- / sup 11 /。

著录项

来源
《IEEE Photonics Technology Letters》 |1996年第2期|P.221-223|共3页
作者
Lentine A.L.; Goossen K.W.;
展开▼
作者单位

展开▼
收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
中图分类光电子技术、激光技术;
关键词

相似文献

外文文献
中文文献
专利

1. High-speed optoelectronic VLSI switching chip with <4000 optical I/O based on flip-chip bonding of MQW modulators and detectors to silicon CMOS [J] . Lentine A.L., Goossen K.W. IEEE journal of selected topics in quantum electronics . 1996,第1期

机译：基于MQW调制器和检测器与硅CMOS的倒装芯片结合，具有<4000光学I / O的高速光电VLSI交换芯片
2. Silicon Germanium CMOS Optoelectronic Switching Device: Bringing Light to Latch [J] . Okyay A.K., Kuzum D., Latif S., IEEE Transactions on Electron Devices . 2007,第12期

机译：硅锗CMOS光电开关设备：为闩锁带来光
3. 1-Gb/s two-beam transimpedance smart-pixel optical receivers made from hybrid GaAs MQW modulators bonded to 0.8 /spl mu/m silicon CMOS [J] . Woodward T.K., Krishnamoorthy A.V. IEEE Photonics Technology Letters . 1996,第3期

机译：由混合GaAs MQW调制器制成的1-Gb / s两光束跨阻智能像素光接收器，结合到0.8 / splμ/ m硅CMOS
4. Optoelectronic VLSI switching chip with greater than 4000 optical I/O based on flip-chip bonding of GaAs/AlGaAs MQW modulators and detectors to silicon CMOS [C] . Lentine, A.L., Goossen, . 1996

机译：基于GaAs / AlGaAs MQW调制器和检测器与硅CMOS的倒装芯片结合，具有超过4000个光学I / O的光电VLSI交换芯片
5. Optical interconnects to silicon CMOS: Integrated optoelectronic modulators and short pulse systems. [D] . Keeler, Gordon Arthur. 2003

机译：与硅CMOS的光学互连：集成光电调制器和短脉冲系统。
6. Recording from defined populations of retinal ganglion cells using a high-density CMOS-integrated microelectrode array with real-time switchable electrode selection [O] . Michele Fiscella, Karl Farrow, Ian L. Jones, -1

机译：使用具有实时可切换电极选择的高密度CMOS集成的微电极阵列从定义的视网膜神经节细胞群体录制
7. Integrated ASIC System and CMOS-MEMS Thermally Actuated Optoelectronic Switch Array for Communication Network [O] . Jian-chiun Liou 2015

机译：用于通信网络的集成asIC系统和CmOs-mEms热驱动光电开关阵列
8. Silicon-nanocrystal Optoelectronic Kerr Effect for Complementary Metal- oxide Semiconductor (CMOS) Compatible Optical Switching [R] . Bambba, N. K., Bickford, J. R., Preble, S. F. 2011

机译：用于互补金属氧化物半导体（CmOs）兼容光开关的硅纳米晶光电克尔效应

Arrays of optoelectronic switching nodes comprised of flip-chip-bonded MQW modulators and detectors on silicon CMOS circuitry

摘要

著录项

相似文献

相关主题

期刊订阅