Fabrication of multiple wavelength lasers in GaAs-AlGaAs structures using a one-step spatially controlled quantum-well intermixing technique

Ooi B.S.; Ayling S.G.

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Fabrication of multiple wavelength lasers in GaAs-AlGaAs structures using a one-step spatially controlled quantum-well intermixing technique

机译：使用一步空间控制的量子阱混合技术在GaAs-AlGaAs结构中制造多波长激光器

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We have applied a new technique, based on impurity-free vacancy diffusion, to control the degree of intermixing across a wafer. Bandgap tuned lasers were fabricated using this technique. Five distinguishable lasing wavelengths were observed from five selected intermixed regions on a single chip. These lasers showed no significant change in transparency current, internal quantum efficiency or internal propagation loss, which indicates that the material quality was not degraded after intermixing.

机译：我们已经应用了一种基于无杂质空位扩散的新技术来控制整个晶片上的混合程度。使用该技术制造了带隙调谐激光器。从单个芯片上的五个选定的混合区域观察到五个可区分的激光波长。这些激光器在透明电流，内部量子效率或内部传播损耗方面没有显示出明显变化，这表明材料质量在混合后不会降低。

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来源
《IEEE Photonics Technology Letters》 |1995年第9期|P.944-946|共3页
作者
Ooi B.S.; Ayling S.G.;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
中图分类光电子技术、激光技术;
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专利

1. Quantum-well intermixing in GaAs-AlGaAs structures using pulsed laser irradiation [J] . Ooi B.S., Hamilton C.J. IEEE Photonics Technology Letters . 1997,第5期

机译：GaAs-AlGaAs结构中使用脉冲激光辐照的量子阱混合
2. Multiple-wavelength integration in InGaAs-InGaAsP structures using pulsed laser irradiation-induced quantum-well intermixing [J] . Boon Siew Ooi, Teik Kooi Ong, Gunawan O. IEEE Journal of Quantum Electronics . 2004,第5期

机译：InGaAs-InGaAsP结构中的多波长积分，采用脉冲激光辐照诱导的量子阱互混
3. Multiple-Wavelength Integration in InGaAs-InGaAsP Structures Using Pulsed Laser Irradiation-Induced Quantum-Well Intermixing [J] . Boon Siew Ooi, Teik Kooi Ong, Oki Gunawan IEEE Journal of Quantum Electronics . 2004,第5期

机译：InGaAs-InGaAsP结构中的多波长积分，使用脉冲激光辐照引起的量子阱混合
4. Multiple-wavelength lasers defined by stripe width using one-step impurity-free quantum well intermixing technique [C] . Won J. Choi, Univ. of California/Santa Barbara, Korea Institute of Science, In-Plane Semiconductor Lasers III . 1999

机译：条纹宽度定义的多波长激光器，采用一步式无杂质量子阱混合技术
5. Dielectric-enhanced quantum-well intermixing in lambda = 1.55 micron indium gallium arsenic phosphide/indium phosphide laser structures. [D] . Hazell, John F. 2002

机译：λ= 1.55微米铟磷化铟镓/磷化铟激光结构中的介电增强量子阱混合。
6. Multiple Wavelength InGaAs Quantum Dot Lasers Using Ion Implantation Induced Intermixing [O] . S Mokkapati, Sichao Du, M Buda, 2007

机译：离子注入诱导混合的多波长InGaAs量子点激光器
7. Anodic-oxide-induced intermixing in GaAs-AlGaAs quantum-well and quantum-wire structures [O] . Chan CY, Yuan S, Jagadish C, 1998

机译：阳极氧化物诱导的Gaas-alGaas量子阱和量子线结构的混合
8. Large-Area Uniform OMVPE (Organometallic Vapor Phase Epitaxial) Growth for GaAs/AlGaAs Quantum-Well Diode Lasers with Controlled Emission Wavelength. [R] . Wang, C. A., Choi, H. K., Connors, M. K. 1989

机译：具有可控发射波长的Gaas / alGaas量子阱二极管激光器的大面积均匀OmVpE（有机金属气相外延）生长。

Fabrication of multiple wavelength lasers in GaAs-AlGaAs structures using a one-step spatially controlled quantum-well intermixing technique

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