A new optoelectronic device based on modulation-doped heterostructure: demonstration of functions as both lateral current injection laser and junction field effect transistor

Honda Y.; Suemune I.

首页> 外文期刊>IEEE Photonics Technology Letters >A new optoelectronic device based on modulation-doped heterostructure: demonstration of functions as both lateral current injection laser and junction field effect transistor

【24h】

A new optoelectronic device based on modulation-doped heterostructure: demonstration of functions as both lateral current injection laser and junction field effect transistor

机译：一种基于调制掺杂异质结构的新型光电器件：演示横向电流注入激光器和结型场效应晶体管的功能

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

A new type of optoelectronic semiconductor device which utilizes the modulation-doped (MOD) heterostructure is demonstrated. The device operates not only as a lateral current injection (LCI) laser but also as a junction field-effect transistor (JFET) based on the MOD heterostructure. This first demonstration of the structural compatibility of the LCI laser with the MODFET is one step toward optoelectronic integration utilizing a common two-dimensional electron gas.

机译：演示了一种新型的利用调制掺杂（MOD）异质结构的光电子半导体器件。该器件不仅用作横向电流注入（LCI）激光器，而且还用作基于MOD异质结构的结型场效应晶体管（JFET）。 LCI激光器与MODFET的结构兼容性的第一个证明是迈向利用通用二维电子气进行光电集成的一步。

著录项

来源
《IEEE Photonics Technology Letters》 |1990年第12期|P.881-883|共3页
作者
Honda Y.; Suemune I.;
展开▼
作者单位

展开▼
收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
中图分类光电子技术、激光技术;
关键词

相似文献

外文文献
中文文献
专利

1. Demonstration of the n-channel vertical-cavity double-heterostructure optoelectronic switching laser and heterostructure field effect transistor [J] . Cooke P., Evaldsson P.A. IEEE Photonics Technology Letters . 1992,第6期

机译：n通道垂直腔双异质结构光电开关激光器和异质结构场效应晶体管的演示
2. 1D p-n Junction Electronic and Optoelectronic Devices from Transition Metal Dichalcogenide Lateral Heterostructures Grown by One-Pot Chemical Vapor Deposition Synthesis [J] . Najafidehaghani Emad, Gan Ziyang, George Antony, Advanced Functional Materials . 2021,第27期

机译：来自过渡金属二硫代根苷旁的横向异质结构的1D P-n结电子器件通过单盆化学气相沉积合成
3. Graphene-based lateral heterostructure transistors exhibit better intrinsic performance than graphene-based vertical transistors as post-CMOS devices [J] . Demetrio Logoteta, Gianluca Fiori, Giuseppe Iannaccone Scientific reports. . 2014,第1期

机译：作为后CMOS器件，基于石墨烯的横向异质结构晶体管表现出比基于石墨烯的垂直晶体管更好的固有性能
4. Integration-compatible Lateral Current Injection Lasers: Design Of 2-d Heterostructure Devices [C] . Sargent, E.H., Xu, . 1997

机译：集成兼容的横向电流注入激光器：二维异质结构器件的设计
5. Design, fabrication and characterization of N-channel InGaAsP-InP based inversion channel technology devices (ICT) for optoelectronic integrated circuits (OEIC): Double heterojunction optoelectronic switches (DOES), heterojunction field-effect transistors (HFET), bipolar inversion channel field-effect transistors (BICFET) and bipolar inversion channel phototransistors (BICPT). [D] . Tan, Eugene. 1998

机译：基于N沟道InGaAsP-InP的倒置通道技术器件（ICT）的设计，制造和表征，用于光电集成电路（OEIC）：双异质结光电开关（DOES），异质结场效应晶体管（HFET），双极倒置沟道场-效应晶体管（BICFET）和双极型反向沟道光电晶体管（BICPT）。
6. Graphene-based lateral heterostructure transistors exhibit better intrinsic performance than graphene-based vertical transistors as post-CMOS devices [O] . Demetrio Logoteta, Gianluca Fiori, Giuseppe Iannaccone -1

机译：作为后CMOS器件基于石墨烯的横向异质结构晶体管表现出比基于石墨烯的垂直晶体管更好的固有性能
7. 1D p–n Junction Electronic and Optoelectronic Devices from Transition Metal Dichalcogenide Lateral Heterostructures Grown by One‐Pot Chemical Vapor Deposition Synthesis [O] . Emad Najafidehaghani, Ziyang Gan, Antony George, 2021

机译：1D P-N结电子和光电子从过渡金属二甲基化物横向异质结构通过一锅化学气相沉积合成
8. Inverted-Ridge-Waveguide Double-Heterostructure Injection Laser with Current and Lateral Optical Confinement. [R] . Figueroa, L., Wang, S. 1977

机译：具有电流和横向光学限制的倒脊波导双异质结构注入激光器。

A new optoelectronic device based on modulation-doped heterostructure: demonstration of functions as both lateral current injection laser and junction field effect transistor

摘要

著录项

相似文献

相关主题

期刊订阅