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首页> 外文期刊>IEEE transactions on circuits and systems . I , Regular papers >Design, Implementation, and Experimental Verification of 5 Gbps, 800 Mrad TID and SEU-Tolerant Optical Modulators Drivers
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Design, Implementation, and Experimental Verification of 5 Gbps, 800 Mrad TID and SEU-Tolerant Optical Modulators Drivers

机译：5 Gbps的设计，实施和实验验证，800mrad TID和SEU耐光调制器驱动器

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This paper presents the design and experimental verification of two drivers designed to be compliant with the high radiation dose levels present in the inner layers of the CERN's Large Hadron Collider (LHC) experimental chambers. The drivers, designed to face up to 800 Mrad (SiO2) Total Ionizing Dose, are able to sustain up to 5 Gbps bit-rate links when integrated in a 65 nm CMOS technology. They are designed to drive two Silicon Photonics optical modulators, Mach Zehnder Modulator and Ring Resonator, which have shown high rad-tolerant levels. The high dose level hardness of the drivers has been achieved by adopting the following Radiation Hardening By Design (RHBD) techniques: enhancement of the MOSFETs model to take into account the effects of high radiation dose levels and of single event effects on the devices, avoidance of using P-MOSFETs, increase of the minimum MOSFET lengths for the switching devices, and the use of Enclosed Layout Transistors shape plus some layout precautions. Moreover, to increase the drivers speed, techniques like buffer chain and inductive peaking are used in the drivers' design. The experimental results have verified the matching of the high-speed high-voltage constraint required by the application. The Total Ionization Dose tests have shown, at 800 Mrad (SiO2), a 30% and 25% amplitude reduction of the output signals eye diagrams of the Mach Zehnder Modulator driver and of the Ring Resonator driver, respectively. In the worst case, in which the drivers will be placed within 5 cm from the beamline of the CMS experiment of the upgraded LHC, the heavy ions tests have shown a BER of 5.19e-8.
机译：本文介绍了两个司机的设计和实验验证，该驱动器符合Cern大型强子撞机（LHC）实验室的内层中存在的高辐射剂量水平。设计用于面对800mrad（SiO2）总电离剂量的驱动器，能够在65nm CMOS技术中集成时维持多达5个Gbps比特率链路。它们设计用于驱动两个硅光子光学调制器，Mach Zehnder调制器和环谐振器，该谐振器具有高耐抗体水平。通过通过设计（RHBD）技术采用以下辐射硬化来实现驱动器的高剂量水平硬度：增强MOSFET模型，以考虑高辐射剂量水平和对设备的单一事件影响的影响，避免使用P-MOSFET，对开关装置的最小MOSFET长度的增加，以及使用封闭的布局晶体管形状加上一些布局预防措施。此外，为了增加驾驶员速度，在驱动器的设计中使用缓冲链和感应峰值等技术。实验结果已经验证了应用所需的高速高压约束的匹配。总电离剂量试验显示，在800mRAD（SiO 2），SCH Zehnder调制器驱动器和环形谐振器驱动器的输出信号的输出信号眼图的30％和25％幅度降低。在最坏的情况下，其中驾驶员将从升级的LHC的CMS实验的CMS实验的光束线上放置在5厘米范围内，重离子测试显示了5.19E-8的BER。

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