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首页> 外文期刊>IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems >Nonisothermal device simulation using the 2D numerical process/device simulator TRENDY and application to SOI-devices
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Nonisothermal device simulation using the 2D numerical process/device simulator TRENDY and application to SOI-devices

机译：使用2D数值过程/设备仿真器TRENDY进行非等温设备仿真并将其应用于SOI设备

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摘要

The electrical characteristics of modern VLSI and ULSI device structures may be significantly altered by self-heating effects. The device modeling of such structures demands the simultaneous simulation of both the electrical and the thermal device behavior and their mutual interaction. Although, at present, a large number of multi-dimensional device simulators are available, most of them are based on physical models which do not properly allow for heat transport and other nonisothermal effects. This paper, demonstrates that the numerical process/device simulator TRENDY provides a solid base for nonisothermal device simulation, as a physically rigorous device model of carrier and heat transport has been incorporated in the TRENDY program. With respect to the boundary conditions, it is shown that inclusion of an artificial boundary material relaxes some fundamental physical inconsistencies resulting from the assumption of ideal ohmic contact boundaries. The program TRENDY has been used for studying several nonisothermal problems in microelectronics. As an example, the authors consider an ultra-thin SOI MOSFET showing that the negative slopes in the V/sub ds//spl minus/I/sub ds/ characteristics are caused by the temperature-dependence of the electron saturation velocity.
机译：现代VLSI和ULSI器件结构的电气特性可能会因自热效应而发生显着变化。这种结构的设备建模要求同时模拟电气和热设备的行为以及它们之间的相互作用。尽管目前有大量的多维设备仿真器可用，但是它们中的大多数都是基于物理模型，这些模型不能适当地考虑热传递和其他非等温效应。本文证明了数值过程/设备仿真器TRENDY为非等温设备仿真提供了坚实的基础，因为TRENDY程序中已包含了物理上严格的载体和热传输设备模型。关于边界条件，已表明，包含人工边界材料可缓解由于假设理想的欧姆接触边界而导致的一些基本物理不一致。 TRENDY程序已用于研究微电子学中的几个非等温问题。例如，作者考虑了一个超薄SOI MOSFET，它表明V / sub ds // spl负/ I / sub ds /特性中的负斜率是由电子饱和速度的温度依赖性引起的。

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