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Non-isothermal extension of the Scharfetter-Gummel technique for hot carrier transport in heterostructure simulations

机译:Scharfetter-Gummel技术在非均质结构模拟中用于热载流子传输的非等温扩展

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摘要

Points out that the Scharfetter-Gummel technique is widely used in algorithms for the simulation of isothermal semiconductor devices. Recent interest in the modeling of ultrasmall devices requires a nonisothermal analysis, i.e., a hydrodynamic model. Several nonisothermal extensions to the Scharfetter-Gummel technique for carrier flux have been proposed for homostructure devices. An extension is presented which is suitable for the simulation of both the carrier flux and carrier energy flux equations in heterostructure devices, with the capability of using Fermi-Dirac statistics. Comparison with the extensions of other authors provides verification of the discretization formulation developed here. Limiting cases are discussed with suitable approximations. Calculated values of fluxes are presented for selected nonisothermal and degenerate cases to highlight the need for inclusion of the Fermi-Dirac statistics in the flux formulations.
机译:指出,Scharfetter-Gummel技术被广泛用于等温半导体器件仿真的算法中。最近对超小型设备建模的兴趣要求进行非等温分析,即流体动力学模型。对于均质结构器件,已经提出了针对载子通量的Scharfetter-Gummel技术的几种非等温扩展。提出了一个扩展,该扩展适用于模拟异质结构器件中的载流子和载流子能量通量方程,并具有使用费米-狄拉克统计的能力。与其他作者的扩展进行比较,可以验证此处开发的离散化公式。极限情况以适当的近似值进行讨论。给出了选定的非等温和简并情况下的通量计算值,以突出显示在通量配方中包括费米-狄拉克统计量的必要性。

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