首页> 外文期刊>IEEE transactions on electronics packaging manufacturing >Length Distribution Analysis for Tin Whisker Growth
【24h】

Length Distribution Analysis for Tin Whisker Growth

机译:锡晶须生长的长度分布分析

获取原文
获取原文并翻译 | 示例
           

摘要

The global movement to lead-free electronics has led semiconductor device assemblers to switch terminals and finishes from lead-based to pure tin or high tin lead-free alloys. This transition has resulted in a reliability concern associated with the formation of conductive tin whiskers, which can grow from a device terminal or lead and cause current leakage or short circuits. This paper presents the results of an experimental study on tin whisker growth. Test specimens consisted of matte and bright tin finishes on copper, Alloy-42, and brass substrate materials. The heat treatments included annealing and two types of simulated reflow. Maximum whisker length and whisker density were measured on 24 different types of tin-plated specimens, after three, eight, and 16 months of room ambient storage after various heat treatments
机译:全球向无铅电子的运动已促使半导体器件组装商将端子和表面处理从铅基合金转变为纯锡或高锡无铅合金。这种过渡导致了与导电锡晶须形成相关的可靠性问题,该导电锡晶须可能会从设备端子或引线中生长出来,并导致电流泄漏或短路。本文介绍了锡晶须生长的实验研究结果。测试样本包括铜,合金42和黄铜基材上的哑光和光亮锡涂层。热处理包括退火和两种类型的模拟回流。在经过各种热处理后,在室温下存放三个,八个和十六个月后,对24种不同类型的镀锡样品测量了最大晶须长度和晶须密度

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号