Ultrahigh Sensitivity of Anomalous Hall Effect Sensor Based on Cr-Doped Bi<sub>2</sub>Te<sub>3</sub> Topological Insulator Thin Films

Y. Ni; Z. Zhang; I. C. Nlebedim; D. C. Jiles

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Ultrahigh Sensitivity of Anomalous Hall Effect Sensor Based on Cr-Doped Bi₂Te₃ Topological Insulator Thin Films

机译：基于Cr掺杂Bi _{2 Te _{3 拓扑绝缘体薄膜的异常霍尔效应传感器的超高灵敏度}}

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Anomalous Hall effect (AHE) was recently discovered in magnetic element-doped topological insulators (TIs), which promises low power consumption and high efficiency spintronics and electronics. This discovery broadens the family of Hall sensors. In this paper, AHE sensors based on Cr-doped Bi2Te3 topological insulator thin films are studied with two thicknesses (15 and 65 nm). It is found, in both cases, that ultrahigh Hall sensitivity can be obtained in Cr-doped Bi2Te3. Hall sensitivity reaches 1666 /T in the sensor with the 15 nm TI thin film, which is higher than that of the conventional semiconductor HE sensor. The AHE of 65 nm sensors is even stronger, which causes the sensitivity increasing to 2620 /T. Furthermore, after comparing Cr-doped Bi2Te3 with the previously studied Mn-doped Bi2Te3 TI Hall sensor, the sensitivity of the present AHE sensor shows about 60 times higher in 65 nm sensors. The implementation of AHE sensors based on a magnetic-doped TI thin film indicates that the TIs are good candidates for ultrasensitive AHE sensors.

机译：最近在掺杂磁性元素的拓扑绝缘体（TI）中发现了异常霍尔效应（AHE），这有望实现低功耗和高效率的自旋电子学和电子学。这一发现拓宽了霍尔传感器的系列。本文研究了基于Cr掺杂的Bi2Te3拓扑绝缘体薄膜的AHE传感器，其厚度为15和65 nm。在这两种情况下都发现，在掺铬的Bi2Te3中可以获得超高的霍尔灵敏度。具有15 nm TI薄膜的传感器中的霍尔灵敏度达到1666 / T，高于传统的半导体HE传感器。 65 nm传感器的AHE甚至更强，导致灵敏度提高到2620 / T。此外，在将Cr掺杂的Bi2Te3与先前研究的Mn掺杂的Bi2Te3 TI霍尔传感器进行比较之后，当前的AHE传感器的灵敏度在65 nm传感器中显示出大约60倍。基于磁性掺杂TI薄膜的AHE传感器的实现表明TI是超灵敏AHE传感器的良好候选者。

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来源
《IEEE Transactions on Magnetics》 |2016年第7期|1-4|共4页
作者
Y. Ni; Z. Zhang; I. C. Nlebedim; D. C. Jiles;
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作者单位

Department of Electrical and Computer Engineering, Iowa State University, Ames, IA, USA;

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正文语种 eng
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关键词
Anomalous Hall effect (AHE) sensor; Anomalous Hall effect sensor; sensitivity; thin films; topological insulators; topological insulators (TIs);

机译：异常霍尔效应（AHE）传感器;异常霍尔效应传感器;灵敏度;薄膜;拓扑绝缘体;拓扑绝缘体（TI）;

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1. Influence of Mn Concentration on Magnetic Topological Insulator Mn_xBi_2−xTe₃ Thin-Film Hall-Effect Sensor [J] . Ni Y., Zhang Z., Nlebedim I.C., Magnetics, IEEE Transactions on . 2015,第11期

机译：Mn浓度对电磁拓扑绝缘子Mn _{x Bi _{2- x Te _{3 薄膜霍尔效应传感器}}}
2. Ferromagnetic Anomalous Hall Effect in Cr-Doped Bi2Se3 Thin Films via Surface-State Engineering [J] . Moon Jisoo, Kim Jinwoong, Koirala Nikesh, Nature reviews Cancer . 2019,第6期

机译：通过地表 - 州工程在CR掺杂Bi2Se3薄膜中的铁磁性异常霍姆效应
3. Ferromagnetic Anomalous Hall Effect in Cr-Doped Bi2Se3 Thin Films via Surface-State Engineering [J] . Moon Jisoo, Kim Jinwoong, Koirala Nikesh, Nano letters . 2019,第6期

机译：通过地表 - 州工程在CR掺杂Bi2Se3薄膜中的铁磁性异常霍姆效应
4. Influence of Mn concentration on magnetic topological insulator MnxBi2−xTe3 thin film Hall effect sensor [C] . Ni Y., Zhang Z., Nlebedim C.I., 2015 IEEE Magnetics Conference . 2015

机译：Mn浓度对磁性拓扑绝缘子Mn x Bi 2-x Te 3 薄膜霍尔效应传感器的影响
5. Magnetotransport Methods to Probe Surface States of Topological Insulator Thin Films and Topological Insulator/Ferromagnet (TI/FM) Heterostructures. [D] . Kumar, Raj. 2015

机译：探测拓扑绝缘体薄膜和拓扑绝缘体/铁磁体（TI / FM）异质结构表面状态的磁传输方法。
6. Edge states and integer quantum Hall effect in topological insulator thin films [O] . Song-Bo Zhang, Hai-Zhou Lu, Shun-Qing Shen -1

机译：拓扑绝缘体薄膜的边缘状态和整数量子霍尔效应
7. Ferromagnetic Anomalous Hall Effect in Cr-Doped Bi2Se3 Thin Films via Surface-State Engineering [O] . Jisoo Moon, Jinwoong Kim, Nikesh Koirala, 2019

机译：通过地表 - 州工程在CR掺杂Bi2Se3薄膜中的铁磁性异常霍姆效应

Ultrahigh Sensitivity of Anomalous Hall Effect Sensor Based on Cr-Doped Bi2Te3 Topological Insulator Thin Films

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Ultrahigh Sensitivity of Anomalous Hall Effect Sensor Based on Cr-Doped Bi₂Te₃ Topological Insulator Thin Films