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首页> 外文期刊>IEEE Transactions on Magnetics >Magnetization Switching and Tunneling Magnetoresistance Effects of MTJs With Synthetic Antiferromagnet Free Layers Consisting of Amorphous CoFeSiB
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Magnetization Switching and Tunneling Magnetoresistance Effects of MTJs With Synthetic Antiferromagnet Free Layers Consisting of Amorphous CoFeSiB

机译：具有非晶态CoFeSiB的合成反铁磁自由层的MTJ的磁化开关和隧穿磁阻效应

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摘要

Magnetic tunnel junctions (MTJs), which consisted of amorphous CoFeSiB layers, were investigated. The CoFeSiB layers were used to substitute for the traditionally used CoFe and/or NiFe layers with an emphasis given on understanding the effect of the amorphous free layer on the switching characteristics of the MTJs. CoFeSiB has a lower saturation magnetization (M{sub}s : 560 emu/cm{sup}3) and a higher anisotropy constant (K{sub}u : 2 800 erg/cm{sup}3) than CoFe and NiFe, respectively. An exchange coupling energy (J{sub}(ex)) of -0.003 erg/cm{sup}2 was observed by inserting a 1.0 nm Ru layer in between CoFeSiB layers. In the Si-SiO{sub}2-Ta 45/Ru 9.5/IrMn 10/CoFe 7/AlO{sub}x/CoFeSiB 7 or CoFeSiB (t)/Ru 1.0/CoFeSiB (7-0/Ru 60 (in nanometers) MTJs structure, it was found that the size dependence of the switching field originated in the lower J{sub}(ex) using the experimental and simulation results. The CoFeSiB synthetic antiferromagnet structures were proved to be beneficial for the switching characteristics such as reducing the coercivity (H{sub}c) and increasing the sensitivity in micrometer size, even in submicrometer sized elements.
机译：研究了由非晶CoFeSiB层组成的磁性隧道结（MTJ）。 CoFeSiB层用于替代传统使用的CoFe和/或NiFe层，重点在于理解非晶自由层对MTJ开关特性的影响。 CoFeSiB的饱和磁化强度（M {sub} s：560 emu / cm {sup} 3）和各向异性常数（K {sub} u：2 800 erg / cm {sup} 3）分别比CoFe和NiFe高。 。通过在CoFeSiB层之间插入1.0nm Ru层，观察到-0.003erg / cm {sup} 2的交换耦合能（J {sub}（ex））。在Si-SiO {sub} 2-Ta 45 / Ru 9.5 / IrMn 10 / CoFe 7 / AlO {sub} x / CoFeSiB 7或CoFeSiB（t）/ Ru 1.0 / CoFeSiB（7-0 / Ru 60（纳米）中）MTJs结构，通过实验和仿真结果发现，开关场的尺寸依赖性源于较低的J {sub}（ex），CoFeSiB合成反铁磁体结构被证明有利于开关特性，例如减小即使在亚微米尺寸的元件中，矫顽力（H {sub} c）也增加了微米尺寸的灵敏度。

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