...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>IEEE Transactions on Magnetics >Magnetoresistance in Magnetic Tunnel Junctions With Amorphous Electrodes
【24h】

Magnetoresistance in Magnetic Tunnel Junctions With Amorphous Electrodes

机译：带有非晶电极的磁性隧道结中的磁阻

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Magnetic tunnel junctions (MTJs) with amorphous CoFeB and Co{sub}2MnSi electrodes were fabricated and examined. In the case of [Co{sub}90Fe{sub}10]{sub}(100-x)B{sub}x, the x = 32% boron addition reduces the magnetization by 30% compared to Co{sub}90Fe{sub}10, yet the reduction of the tunnel magnetoresistance (TMR) is over 95%. On the contrary, in the case of Co{sub}(100-x-y)Mn{sub}xSi{sub}y, although net magnetization is very small at room temperature, the TMR can be as large as 7%. The character of each metalloid (boron and silicon) could be responsible for the peculiar behavior to each system.
机译：制作并检查了具有非晶态CoFeB和Co {sub} 2MnSi电极的磁性隧道结（MTJ）。在[Co {sub} 90Fe {sub} 10] {sub}（100-x）B {sub} x的情况下，x = 32％的硼添加量使磁化强度比Co {sub} 90Fe {子} 10，但隧道磁阻（TMR）的降低超过95％。相反，在Co {sub}（100-x-y）Mn {sub} xSi {sub} y的情况下，尽管在室温下净磁化非常小，但TMR可以高达7％。每个准金属（硼和硅）的特性可能是每个系统的特殊行为。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号