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首页> 外文期刊>IEEE Transactions on Magnetics >Write Error Rate of Spin-Transfer-Torque Random Access Memory Including Micromagnetic Effects Using Rare Event Enhancement
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Write Error Rate of Spin-Transfer-Torque Random Access Memory Including Micromagnetic Effects Using Rare Event Enhancement

机译：自旋转移扭矩随机存取存储器的写错误率，包括使用稀有事件增强的微磁效应

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Spin-transfer-torque random access memory (STT-RAM) is a promising candidate for the next generation of random access memory due to improved scalability, read-write speeds, and endurance. However, the write pulse duration must be long enough to ensure a low write error rate (WER), the probability that a bit will remain unswitched after the write pulse is turned OFF, in the presence of stochastic thermal effects. WERs on the scale of 10-9 or lower are desired. Within a macrospin approximation, WERs can be calculated analytically using the Fokker-Planck method to this point and beyond. However, dynamic micromagnetic effects within the bit can affect and lead to faster switching. Such micromagnetic effects can be addressed via numerical solution of the stochastic Landau-Lifshitz-Gilbert-Slonczewski (LLGS) equation. However, determining WERs approaching 10-9 would require well over 109 such independent simulations, which is infeasible. In this paper, we explore the calculation of WER using rare event enhancement (REE), an approach that has been used for Monte Carlo simulation of other systems where rare events nevertheless remain important. Using a prototype REE approach tailored to the STT-RAM switching physics, we demonstrate reliable calculation of a WER to 10-9 with sets of only approximately 103 ongoing stochastic LLGS simulations, and the apparent ability to go further.
机译：自旋转移扭矩随机存取存储器（STT-RAM）由于可扩展性，读写速度和耐用性的提高，是下一代随机存取存储器的有希望的候选者。但是，写脉冲的持续时间必须足够长，以确保低的写错误率（WER），即在存在随机热效应的情况下，在关闭写脉冲后某个位将保持不切换的可能性。期望WERs为10-9或更低。在宏旋转近似中，到目前为止，可以使用Fokker-Planck方法解析地计算WER。但是，钻头内的动态微磁效应会影响并导致更快的切换。可以通过随机Landau-Lifshitz-Gilbert-Slonczewski（LLGS）方程的数值解来解决这种微磁效应。但是，确定接近10-9的WER将需要超过109个这样的独立模拟，这是不可行的。在本文中，我们探索了使用稀有事件增强（REE）进行WER的计算的方法，该方法已用于在其他系统中进行蒙特卡洛模拟，但稀有事件仍然很重要。使用针对STT-RAM交换物理量身定制的原型REE方法，我们展示了仅约103个正在进行的随机LLGS模拟集的可靠的WER计算至10-9，以及进一步发展的明显能力。

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