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首页> 外文期刊>Magnetics, IEEE Transactions on >Comparative Analysis of MTJ/CMOS Hybrid Cells Based on TAS and In-Plane STT Magnetic Tunnel Junctions
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Comparative Analysis of MTJ/CMOS Hybrid Cells Based on TAS and In-Plane STT Magnetic Tunnel Junctions

机译：基于TAS和面内STT磁性隧道结的MTJ / CMOS混合单元的比较分析

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摘要

In the last few years, spintronics has attracted the full attention of the scientific community for the synergy it provides to conventional complimentary metal–oxide–semiconductor (CMOS) devices (nonvolatility, infinite endurance, radiation immunity, increased density, and so on). Many hybrid (magnetic/CMOS) cells have been proposed which can store and process data in both electrical and magnetic ways. Such cells are mainly based on magnetic tunnel junctions (MTJs) and are suitable for use in magnetic random access memories (MRAMs) and reprogrammable computing (magnetic FPGAs, nonvolatile registers, processor cache memories, and so on). In this paper, we report the results of exhaustive energy-performance analysis of the set of hybrid cells recently published in the literature. We explore their limits in metrics of the required silicon area, robustness, read/write speed, and consumed energy. Two different mechanisms for writing non-volatile data stored in MTJs are applied to each hybrid cell: thermally assisted switching (TAS) and spin-transfer torque (STT). All the results were obtained through simulations in Cadence Spectre 7.2. For the CMOS part, we used 45 nm predictive transistor models whereas the MTJ part was simulated using the 120 nm nm TAS Spintec model and the 100 nm nm STT Spinlib model. The results presented here are a valuable resource for future designers of hybrid devices if they need to select an appropriate hybrid cell for a target application.
机译：在过去的几年中，自旋电子器件因其与传统的互补金属氧化物半导体（CMOS）器件（不挥发，无限的耐力，抗辐射性，密度增加等）之间的协同作用而引起了科学界的充分关注。已经提出了许多混合（磁性/ CMOS）单元，其可以以电和磁性方式存储和处理数据。此类单元主要基于磁性隧道结（MTJ），适用于磁性随机存取存储器（MRAM）和可重新编程的计算（磁性FPGA，非易失性寄存器，处理器高速缓存等等）。在本文中，我们报告了最近发表在文献中的混合电池组的详尽的能量性能分析结果。我们在所需硅面积，耐用性，读/写速度和能耗等指标上探索了它们的局限性。用于写入存储在MTJ中的非易失性数据的两种不同机制应用于每个混合单元：热辅助开关（TAS）和自旋转移矩（STT）。所有结果都是通过Cadence Spectre 7.2中的模拟获得的。对于CMOS部分，我们使用45 nm预测晶体管模型，而使用120 nm nm TAS Spintec模型和100 nm STT Spinlib模型模拟MTJ部分。如果混合动力设备的未来设计人员需要为目标应用选择合适的混合动力电池，那么这里提出的结果将为他们提供宝贵的资源。

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