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首页> 外文期刊>IEEE Transactions on Magnetics >Cache Memory Design With Magnetic Skyrmions in a Long Nanotrack
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Cache Memory Design With Magnetic Skyrmions in a Long Nanotrack

机译：长磁道中具有磁性Skyrmions的高速缓存存储器设计

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Magnetic skyrmion (MS), a vortexlike region with reversed magnetization in nanomagnets, has recently emerged as an exciting development in the field of spintronics. It has a number of beneficial features, including remarkably high stability, ultralow depinning current density, and extremely compact size. Due to these benefits, skyrmions have generated great interest in the design of spintronic memory. In this paper, we evaluate the use of skyrmion-based memory as a last-level cache for general-purpose processors. In the skyrmion-based memory structure, data can be densely packed as multiple bits in a long magnetic nanotrack. Write operations are performed by injecting a spin-polarized current in the nanotrack. Since multiple skyrmions (each representing a bit) are packed into a single nanotrack, they need to be accessed by shifting them along the nanotrack with a charge current passing through a spin-Hall metal (SHM). We identify the following key challenges associated with MS-based cache design: 1) the high-current requirements for skyrmion nucleation limit the density benefits offered by these structures, since the transistor supplying write currents is the limiting factor that determines the bit-cell area; 2) the proposed nanotrack structure results in significant performance overheads due to the latency arising from the shift operations; 3) the skyrmions move toward the edge of the nanotrack during shift operations owing to the Magnus force. Hence, an additional idle operation time is required to relax skyrmions back through the repulsive force from the edge; and 4) to avoid annihilation of skyrmions from the edge, the duration and the current density of the shift operation have to be well controlled. To overcome these challenges, a multi-bit skyrmion cell with appropriate peripheral circuit is proposed, considering the heterogeneity in the read/write characteristics. The density benefits are explored by performing the layout of different multi-bit cells. We perform a systematic device-circuit-architecture co-design to evaluate the feasibility of our proposal. Our experiments demonstrate the potential of, and the challenges involved in, using skyrmion-based memory as last-level caches.
机译：磁天rm（MS）是一种在纳米磁体中具有反向磁化的涡旋状区域，最近作为自旋电子学领域的一个令人激动的发展出现。它具有许多有益的功能，包括非常高的稳定性，超低的固定电流密度和非常紧凑的尺寸。由于这些优点，天窗离子对自旋电子存储器的设计引起了极大的兴趣。在本文中，我们评估了基于skyrmion的内存作为通用处理器的最后一级缓存的使用。在基于skyrmion的存储结构中，可以将数据密集地打包为长磁纳米轨道中的多个位。通过在纳米磁道中注入自旋极化电流来执行写操作。由于多个skyrmion（每个代表一个位）被包装到单个纳米轨道中，因此需要通过电荷通过自旋霍尔金属（SHM）沿纳米轨道移动它们来进行访问。我们确定了与基于MS的缓存设计相关的以下主要挑战：1）天体离子成核的高电流要求限制了这些结构所提供的密度优势，因为提供写电流的晶体管是决定位单元面积的限制因素; 2）由于移位操作引起​​的等待时间，所提出的纳米轨道结构导致显着的性能开销； 3）在马格努斯力的作用下，天窗离子在移位操作中向纳米轨道的边缘移动。因此，需要额外的空闲操作时间以通过边缘的排斥力使天空中的飞毛松弛。 4）为避免从边缘歼灭天敌，必须很好地控制变速操作的持续时间和电流密度。为了克服这些挑战，考虑到读/写特性中的异质性，提出了一种具有适当外围电路的多位Skyrmion单元。通过执行不同的多位单元的布局来探索密度优势。我们进行了系统的设备-电路-架构协同设计，以评估我们的建议的可行性。我们的实验证明了将基于skyrmion的内存用作最后一级缓存的潜力以及所涉及的挑战。

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