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首页> 外文期刊>Magnetics, IEEE Transactions on >Magnetic, Structural, and Dielectric Properties of Bi1-xKxFeO3 Thin Films Using Sol-Gel
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Magnetic, Structural, and Dielectric Properties of Bi1-xKxFeO3 Thin Films Using Sol-Gel

机译：Bi 1- x K x FeO 3 使用溶胶凝胶的薄膜

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摘要

Bismuth iron oxide (Bi1−xKxFeO3) thin films are prepared using sol-gel and the spin coating method. Films are deposited onto copper substrates and are annealed in the presence of vacuum with 500 Oe magnetic field at 300 °C. Potassium has an ionic radius of 1.64 Å and replaces Bi, which has an ionic radius of 1.17 Å. Based on the ionic radii difference of Bi3+ and K+, the dopant concentration is varied in the range ({ {{{x}} =}}~0.0) –0.3. X-ray diffractometer analysis shows that at ({{x}} {=} {0.3}) an impurity phase (K2O) appears, which was not present at low dopant concentrations. It is shown here that ferromagnetic behavior arises in doped BiFeO3 films due to suppression of helical spin structure. In addition, as K+ replaces Bi3+ the charge compensation mechanism gives rise to oxygen vacancies and to the formation of Fe4+ cations, thus inducing ferromagnetic behavior. Variation in dopant concentration strongly affects the dielectric properties. Increase in dielectric constant up to (sim 84) was observed with increase in dopant concentration up to 0.15. Decrease in dielectric constant ( (sim 25) ), beyond 0.15 doping concentration, might have been observed because of the appearance of impurity phase as is observed in structural and magnetic properties.
机译：氧化铋铋（Bi 1-x K x FeO 3 ）薄膜使用溶胶-凝胶和旋涂方法制备。将膜沉积到铜基板上，并在真空中，在500 Oe磁场和300°C的温度下进行退火。钾的离子半径为1.64Å，并取代了Bi，后者的离子半径为1.17Å。根据Bi 3 + 和K + 的离子半径差，掺杂剂浓度在 （{{{{{x}} =}}〜0.0） –0.3。 X射线衍射仪分析表明，在 （{{x}} {=} {0.3}） 出现（K 2 O）相，在低掺杂浓度下不存在。结果表明，掺杂的BiFeO 3 薄膜由于抑制了螺旋自旋结构而产生了铁磁行为。此外，由于K + 取代Bi 3 + ，电荷补偿机制会导致氧空位和Fe 4 + 阳离子的形成，从而引起铁磁行为。掺杂剂浓度的变化强烈影响介电性能。随着掺杂剂浓度的增加，介电常数增加到 （sim 84） 。可能已经观察到介电常数的降低（ （sim 25） ）超过0.15掺杂浓度。从结构和磁性方面观察到杂质相的出现。

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