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Giant magneto-impedance in Co-rich amorphous wires and films

机译:富钴非晶线材和薄膜中的巨磁阻抗

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摘要

A comprehensive analysis of magneto impedance (MI) phenomena in Co-rich amorphous materials is presented on the basis of skin effect in combination with dynamical magnetization processes. We consider a MI effect for which the domain walls are perpendicular to the current and field direction. Thus, the magnetization induced by current proceeds, via both the wall movement and moment rotation. The magnetic responses of impedance in wires and films have some common features and can be understood from the same mechanism. The sensitivity of the magnetic response in a small sample (1 mm length and a few micrometer thickness) is about 10%/Oe in wires and 5%/Oe in films. The model describes well the existing experimental data for moderate frequencies, There is some quantitative discrepancy for the case of a very strong skin effect, where the position dependence of basic magnetostatic parameters is important.
机译:结合趋肤效应和动态磁化过程,对富钴非晶材料中的磁阻(MI)现象进行了综合分析。我们考虑畴壁垂直于电流和磁场方向的MI效应。因此,由电流引起的磁化通过壁运动和力矩旋转而进行。导线和薄膜中阻抗的磁响应具有一些共同的特征,可以从相同的机制中理解。小样品(长度为1毫米,厚度为几微米)中的磁响应灵敏度约为10%/ Oe(导线)和5%/ Oe(薄膜)。该模型很好地描述了现有的中频实验数据。对于非常强烈的集肤效应,基本静磁参数的位置依赖性很重要,因此在定量上存在差异。

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