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首页> 外文期刊>IEEE Transactions on Magnetics >High coercivity in Co-Cr films induced by nitrogen gas addition during room temperature sputter-deposition
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High coercivity in Co-Cr films induced by nitrogen gas addition during room temperature sputter-deposition

机译:室温溅射沉积过程中添加氮气导致Co-Cr薄膜的高矫顽力

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摘要

Nitrogen gas addition was investigated for deposition of Co-Cr films at room temperature. It was found that nitrogen addition has a remarkable effect on increasing perpendicular coercivity Hc/sub /spl perp// for films deposited at high Ar pressures although negligible amount of nitrogen was observed in the films. The increase in He, was interpreted in terms of a microstructure change which is characterized by development of an isolated structure accompanied by grain size reduction. Films deposited at low Ar pressures exhibited only little increase in He, with the nitrogen gas addition. Also, nitrogen inclusion and a lattice expansion were observed for these films.
机译:研究了在室温下添加氮气以沉积Co-Cr膜的方法。已经发现,对于在高Ar压力下沉积的膜,氮的添加对提高垂直矫顽力Hc / sub / splperp //具有显着的影响,尽管在膜中观察到的氮量可忽略不计。 He的增加是根据微观结构的变化来解释的,该变化的特征是伴随着晶粒尺寸减小的孤立结构的发展。在低Ar压力下沉积的膜,在添加氮气的情况下,He的He增长很小。同样,对于这些膜观察到了氮夹杂和晶格膨胀。

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