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Design and fabrication of unshielded dual-element horizontal MR heads

机译:非屏蔽双元件水平MR磁头的设计与制造

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摘要

An unshielded, dual-element horizontal MR head utilizing a differential detection technique was designed and fabricated. A new process was developed for etching MR sensor gaps utilizing a combination of direct-write e-beam lithography, reactive ion etching, and ion milling, which allowed heads to be fabricated with MR gap lengths as small as 0.15 /spl mu/m. Fabricated heads were tested by quasi-statically passing them over prerecorded transitions on flexible particulate media. Calculations from two-dimensional analytical and finite-element models correlate well with readback data.
机译:设计并制造了一种采用差分检测技术的非屏蔽双元件水平MR磁头。利用直接写入电子束光刻技术,反应性离子蚀刻技术和离子铣削技术,开发了一种用于蚀刻MR传感器间隙的新工艺,从而可以制造出MR间隙长度小至0.15 / spl mu / m的磁头。通过在固定颗粒介质上预先记录的过渡上准静态地使预制头经过测试。二维分析模型和有限元模型的计算与回读数据相关性很好。

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