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首页> 外文期刊>IEEE Transactions on Magnetics >Perpendicular Magnetic Anisotropy Electric Field Modulation in Magnetron-Sputtered Pt/Co/X/MgO Ultrathin Structures With Chemically Tailored Top Interface
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Perpendicular Magnetic Anisotropy Electric Field Modulation in Magnetron-Sputtered Pt/Co/X/MgO Ultrathin Structures With Chemically Tailored Top Interface

机译:磁控溅射PT / CO / X / MgO超薄结构的垂直磁各向异性电场调制与化学定制的顶部界面

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摘要

Ab initio calculations of voltage-controlled perpendicular magnetic anisotropy predict that the adjunction of Pt at the top of Co/MgO interface in Pt/Co/MgO ultrathin structures would enhance the perpendicular anisotropy and its electric field (E-field) variation rate. Following these theoretical expectations, using the magnetron-sputtering technique, we first designed and elaborated magnetic multilayered samples which have subsequently been patterned by UV lithography in magnetotransport devices. The as-deposited samples show perpendicular magnetization configuration whose E-field modulation has been studied by anomalous Hall effect magnetometry experiments under applied E-field in patterned devices. The measured voltage anisotropy modulation effect is found to be asymmetric with respect to the E-field polarity, in qualitative agreement with theoretical predictions.
机译:AB Initio计算电压控制的垂直磁各向异性的计算预测,PT / CO / MGO超薄结构中CO / MGO接口顶部的PT的互动将增强垂直各向异性及其电场(E场)变化率。 在这些理论期望之后,使用磁控溅射技术,我们首先设计和详细地设计的磁性多层样本,其随后通过磁通量术中的UV光刻图案化。 沉积的样品显示垂直磁化构造,其通过在图案化器件中的应用E场下进行了异常霍尔效应磁力学实验研究了其E场调制。 在与理论预测的定性协议中,发现测量的电压各向异性调制效果是关于电子场极性的不对称性。

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