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TiN and TiC Intermediate Layers for FePt-C-Based Magnetic Recording Media

机译:基于FePt-C的磁记录介质的TiN和TiC中间层

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Conductive TiN and TiC intermediate layers were used to promote epitaxial growth of (001)-textured FePt in place of the traditional nonconductive MgO intermediate layer. The film structure was given by glass substrate/Cr$_{90}$Ru$_{10}$/(TiC or TiN)/FePt-C. The films were fabricated under constant deposition temperature of 350 $^{circ}$C for all three layers. Both TiN and TiC were capable of inducing (001)-textured FePt with square magnetic hysteresis loops and out-of-plane coercivity of up to 4 kOe. Further increase in deposition temperature of FePt recording layer up to 500 $^{circ}$ C resulted in monotonic increases in coercivity of up to 9 kOe while still maintaining strong perpendicular anisotropy, large magnetic squareness, and a small in-plane component. Subsequent doping of up to 40 vol. % C in FePt led to increases of coercivity beyond 14 kOe with reduction in intergranular lateral exchange coupling.
机译:代替传统的不导电MgO中间层,使用导电TiN和TiC中间层来促进(001)织构的FePt的外延生长。薄膜结构由玻璃基板/ Cr <配方公式type =“ inline”> $ _ {90} $ Ru <配方公式type =“ inline”> < tex Notation =“ TeX”> $ _ {10} $ /(TiC或TiN)/ FePt-C。在所有三个层的350恒定沉积温度下制备薄膜。 TiN和TiC都能够诱导(001)织构化的FePt,具有方形磁滞回线,面外矫顽力高达4 kOe。 FePt记录层的沉积温度进一步升高,直至达到500 $ ^ {circ} $ C导致矫顽力的单调增加。高达9 kOe,同时仍保持很强的垂直各向异性,大的磁性垂直度和小的面内分量。随后掺杂达40 vol。 FePt中的%C导致矫顽力增加到14 kOe以上,同时晶间横向交换耦合降低。

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