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首页> 外文期刊>Magnetics, IEEE Transactions on >Influence of the Non-Linear UHF-RFID IC Impedance on the Backscatter Abilities of a T-Match Tag Antenna Design
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Influence of the Non-Linear UHF-RFID IC Impedance on the Backscatter Abilities of a T-Match Tag Antenna Design

机译：非线性UHF-RFID IC阻抗对T型匹配标签天线设计的反向散射能力的影响

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摘要

In ultra-high-frequency radio-frequency-identification (UHF-RFID) the conjugate complex matching of the packaged UHF-RFID transponder IC and the tag antenna structure is important to increase the reading range of the transponder tag. Quite often half-wavelength dipole-like antenna structures are used. Due to the fact that the impedances of the packaged IC and the dipole antenna structure are in different domains, a matching structure is needed to accomplish the conjugate complex matching. A common technique to carry out the matching is the so called T-match. Since the nominal input impedance of the IC depends on the applied antenna voltage (and in a strongly non-linear way), the backscatter abilities of the tag are also functions of the applied voltage. In the present work those dependencies are investigated in terms of full-wave finite element simulations and measurements.
机译：在超高频射频识别（UHF-RFID）中，封装的UHF-RFID应答器IC和标签天线结构的共轭复合匹配对于增加应答器标签的读取范围很重要。通常使用半波偶极子状天线结构。由于封装的IC和偶极天线结构的阻抗处于不同的域中，因此需要匹配结构来完成共轭复数匹配。进行匹配的常用技术是所谓的T匹配。由于IC的标称输入阻抗取决于施加的天线电压（并以强烈的非线性方式），因此标签的反向散射能力也是施加电压的函数。在本工作中，将根据全波有限元模拟和测量来研究这些依赖性。

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