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Enhanced Electric and Magnetic Properties of the Epitaxial Multiferroic Heterostructure

机译：外延多铁性异质结构的增强的电磁性能

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摘要

Multiferroic heterostructure $({rm Ba}_{0.5}{rm Sr}_{0.5}){rm TiO}_{3}({rm BST})/{rm BiFeO}_{3}({rm BFO})$ have been deposited by pulsed laser deposition method. X-ray diffraction shows that the BFO and BST were epitaxial grown on ${rm La}_{0.7}{rm Sr}_{0.3}{rm MnO}_{3}$-buffered (100) ${rm SrTiO}_{3}$ substrate. Interestingly, the BST/BFO heterostructure exhibits improved ferroelectric and ferromagnetic behaviors with remnant polarization $(2Pr)sim 34.8 mu{rm C/cm}^{2}$ and saturation magnetization $({rm Ms})sim 4.65 {rm emu/cm}^{3}$. Compared with the single BFO film, the BST/BFO heterostructure showed higher dielectric constant and lower dielectric loss. Furthermore, the leakage behaviors of the BST/BFO heterostructure were consistent with SCLC behavior at low electric-field region and PF emission at high electric-field region. Our result indicates the BST/BFO multiferroic heterostructure may be a promising material for the high-density memory application.
机译：多铁性异质结构$ {{rm Ba} _ {0.5} {rm Sr} _ {0.5}）{rm TiO} _ {3}（{rm BST}）/ {rm BiFeO} _ {3}（{rm BFO}） $已经通过脉冲激光沉积方法沉积。 X射线衍射显示BFO和BST外延生长在$ {rm La} _ {0.7} {rm Sr} _ {0.3} {rm MnO} _ {3} $缓冲（100）$ {rm SrTiO}上_ {3} $美元。有趣的是，BST / BFO异质结构表现出改善的铁电和铁磁性能，剩余极化$（2Pr）sim 34.8 mu {rm C / cm} ^ {2} $，饱和磁化强度$（{rm Ms}）sim 4.65 {rm emu / cm} ^ {3} $。与单BFO膜相比，BST / BFO异质结构显示出更高的介电常数和更低的介电损耗。此外，BST / BFO异质结构的泄漏行为与低电场区域的SCLC行为和高电场区域的PF发射一致。我们的结果表明BST / BFO多铁性异质结构可能是高密度存储应用的有前途的材料。

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