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Noise Mechanisms in Small Grain Size Perpendicular Thin Film Media

机译：小晶粒垂直薄膜介质中的噪声机制

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In this paper, we present a set of systematic experimental investigations on possible noise mechanisms for current perpendicular thin film media of small grain sizes. In particular, we focus on intergranular exchange coupling and grain boundary surface anisotropy in the granular layer of the present continuous-granular-composite film structure. Micromagnetic modeling studies are conducted to study the impact of the observed experimental phenomenon. Modeled experiments show that significant intergranular exchange coupling may occur when oxide grain boundary thickness becomes less than 1 nm. If the grain boundary thickness has significant distribution below this critical value, the exponential dependence of the coupling strength on the oxide thickness would yield significant degradation of the medium signal-to-noise ratio. Carefully designed experiments have also been conducted to study possible grain boundary interfacial anisotropy. Co/Cr, CoPt/Cr, Co/SiO $_{2}$, Co/Cr $_{2}$ O $_{3}$, and Co/TiO $_{2}$ interfaces are investigated and the corresponding interfacial anisotropy strengths are quantitatively measured. Although Co/SiO$_{2}$ interfacial anisotropy appears to be the weakest among them, the measured interfacial anisotropy energy strengths for all of them are significant fractions of the crystalline perpendicular anisotropy of the grains at present grain sizes. Finally, we investigated the impact of stacking faults in hcp Co-alloy grains. It is found that when the anisotropy strength of a small segment of a grain substantially reduces due to the existence of stacking faults, it will yield a switching field reduction disproportional to -n-nthe volume ratio of the segment.
机译：在本文中，我们提出了一组针对当前小晶粒垂直薄膜介质可能的噪声机制的系统实验研究。特别地，我们关注本连续颗粒-复合膜结构的颗粒层中的颗粒间交换耦合和晶界表面各向异性。进行微磁建模研究以研究观察到的实验现象的影响。模拟实验表明，当氧化物晶界厚度小于1 nm时，可能发生明显的晶间交换耦合。如果晶界厚度具有低于该临界值的显着分布，则耦合强度对氧化物厚度的指数依赖性将导致中等信噪比的显着降低。还进行了精心设计的实验来研究可能的晶界界面各向异性。 Co / Cr，CoPt / Cr，Co / SiO $ _ {2} $，Co / Cr $ _ {2} $ O $ _ {3} $和Co / TiO $ _ {2} $界面进行了研究，定量测量相应的界面各向异性强度。尽管Co / SiO $ _ {2} $界面各向异性似乎是其中最弱的，但是在当前晶粒尺寸下，所有这些材料的界面各向异性能强度测量值都是晶粒的结晶垂直各向异性的重要部分。最后，我们研究了堆垛层错在hcp钴合金晶粒中的影响。已经发现，当一小段晶粒的各向异性强度由于存在堆垛层错而大大降低时，将产生与该段的-n-n体积比不成比例的开关场减小。

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