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Comprehensive Studies on the Magnetic Reversal Properties of Bilayered Magnetic Anti-Dot Lattices

机译:双层磁性反点格子的磁性反转特性的综合研究

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In this work, we report the results of our study on the magnetization-reversal properties in a bilayered magnetic antidot lattice (BMAL) system consisting of upper perforated thick Co layer of 40 nm and lower continuous thin Ni layer of 5 nm, probed by using a superconducting-quantum-interference-device (SQUID) magnetometer and by magnetic-force microscopy (MFM). Such a BMAL structure was fabricated by using photolithography and controlled wet-etching processes. A systematic study on the in-plane anisotropy, and the switching-field properties was carried out. The atomic-force-microscopy (AFM) image clearly indicated that the anti-dot array structures are well defined, and the local element composition was confirmed by using the energy dispersive spectra (EDS). The room-temperature hysteresis curves, taken along different directions of the applied magnetic-field, were proved to be useful to understand the magnetic anisotropy in the sample. A kind of uniaxial anisotropy with easy axis along 0$^{circ}$ and hard axis along 90$^{circ}$ of applied field direction was observed. To get a comprehensive knowledge about the domain configuration, we performed the MFM imaging along the easy and hard axis of the lattice. The MFM images revealed well-defined periodic domain networks which can be ascribed to the anisotropies such as magnetic uniaxial anisotropy, configurational anisotropy, etc. The observed changes in the magnetic properties are closely related to the patterning that pins the domains as well as to the magneto-anisotropic BMAL structure.
机译:在这项工作中,我们报告了在双层磁解毒点阵(BMAL)系统中的磁化反转特性的研究结果,该系统由40 nm的上部穿孔厚Co层和5 nm的下部连续薄Ni层组成,通过使用超导量子干涉仪(SQUID)磁力计和磁力显微镜(MFM)。通过使用光刻和受控的湿法蚀刻工艺来制造这种BMAL结构。对面内各向异性和开关场特性进行了系统研究。原子力显微镜(AFM)图像清楚地表明反点阵列结构定义明确,并且通过使用能量色散谱(EDS)确认了局部元素组成。事实证明,沿施加磁场的不同方向绘制的室温磁滞曲线对于理解样品中的磁各向异性是有用的。一种单轴各向异性,其易轴沿0 $ ^ {circ} $ ,而硬轴沿90 $ ^ {circ} $ 。为了获得有关域配置的全面知识,我们沿晶格的易轴和硬轴执行了MFM成像。 MFM图像揭示了定义明确的周期性畴网络,该网络可以归因于各向异性,例如磁单轴各向异性,构型各向异性等。观察到的磁性能变化与钉扎畴的图案以及与磁各向异性BMAL结构。

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