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首页> 外文期刊>Magnetics, IEEE Transactions on >Spin Asymmetry Calculations of the $TMRhbox{-}V$ Curves in Single and Double-Barrier Magnetic Tunnel Junctions
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Spin Asymmetry Calculations of the $TMRhbox{-}V$ Curves in Single and Double-Barrier Magnetic Tunnel Junctions

机译:单势垒和双势垒磁隧道结中 $ TMRhbox {-} V $ 曲线的自旋不对称计算

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摘要

Spin-polarization asymmetry is the key parameter in asymmetric voltage behavior (AVB) of the tunnel magnetoresistance $(TMR)$ in magnetic tunnel junctions. In this paper, we study the value of the $TMR$ as a function of the applied voltage $V_{a}$ in the single as well as double barrier magnetic tunnel junctions (SMTJ & DMTJ, which are constructed from CoFeB/MgO interfaces) and numerically estimate the possible difference of the $TMRhbox{-}V_{a}$ curves for negative and positive voltages in the homojunctions. As a result, we found that AVB may help to determine the exact values of Fermi wave vectors for minority and majority conducting spin sub-bands. Moreover, significant asymmetry of the experimental $TMRhbox{-}V_{a}$ curves, which arises due to different annealing regimes, is explained by different heights of the tunnel barriers and values of the spin asymmetry. The numerical $TMRhbox{-}V_{a}$ data are in good agreement with experimental ones.
机译:自旋极化不对称是隧道磁阻的不对称电压行为(AVB)的关键参数。 $(TMR)$ 隧道路口。在本文中,我们研究了 $ TMR $ 的值与施加电压的关系“> $ V_ {a} $ 以及单势垒和双势垒磁隧道结(SMTJ和DMTJ,由CoFeB / MgO接口构造)中数值估计同形结中负电压和正电压的 $ TMRhbox {-} V_ {a} $ 曲线的可能差异。结果,我们发现AVB可能有助于确定少数和多数传导自旋子带的费米波矢量的准确值。此外,由于不同的退火方式,导致实验 $ TMRhbox {-} V_ {a} $ 曲线的显着不对称通过不同的隧道势垒高度和自旋不对称值来解释。数值 $ TMRhbox {-} V_ {a} $ 数据与实验数据非常吻合。

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