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首页> 外文期刊>Magnetics, IEEE Transactions on >Comparison of Experiment and Simulation Results of Interlayer Thickness Effect in Perpendicular Recording Media
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Comparison of Experiment and Simulation Results of Interlayer Thickness Effect in Perpendicular Recording Media

机译：垂直记录介质中层间厚度效应的实验与模拟结果比较

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The effect of interlayer thickness $({rm t}_{rm IL})$ on recording performance of the media showing relatively close to coherent switching behavior is investigated. The range of ${rm t}_{rm IL}$ was widely controlled from 20 to 45 nm by inserting an amorphous CrTa filling layer between NiW(6 nm)/Ru(14 nm) and amorphous FeCoTaZr soft underlayer (SUL). Minor heating effects at a thicker CrTa on a glass substrate are detected, but the change in magnetic properties and microstructure even at ${rm t}_{rm IL}=45 $ nm is small enough to study the head-to-SUL spacing effect. A thinner IL clearly improves both reverse overwrite (ROW) and signal-to-noise (SoNR $_{2{rm T}}$) at 2 T, but it reduces resolution (RES). Less dependence of magnetic core width (MCW) on ${rm t}_{rm IL}$ is shown due to compensation of wider magnetic write width (MWW) and narrower erasure band (EB) at a thinner IL. According to simulation results, a thinner IL enhances field strength underneath the center of the writer and more field penetration into the media but the maximum effective field located near the gap changes very little. These field profiles improve writeability at low frequencies, but they do not affect much at mid-to-high frequencies. This situation can explain better ROW, lower RES, and wider MWW at a thinner IL. Higher crosstrack field gradient at a thinner IL corresponds to narrower EB. The improvement of SoNR$_{2{rm T}}$ at a thinner IL is caused by the increase in signal at low frequency and the further decrease in dc noise. All the recording parameters with increasing ${rm t}_{rm IL}$ are qualitatively consistent with simulation results.
机译：研究了层间厚度$（{rm t} _ {rm IL}）$对显示相对接近相干切换行为的介质的记录性能的影响。通过在NiW（6 nm）/ Ru（14 nm）和非晶FeCoTaZr软衬层（SUL）之间插入非晶CrTa填充层，将$ {rm t} _ {rm IL} $的范围控制在20至45 nm之间。检测到在玻璃基板上较厚的CrTa上有较小的热效应，但是即使在$ {rm t} _ {rm IL} = 45 $ nm时，磁性能和微观结构的变化也很小，足以研究磁头到SUL的间距影响。较薄的IL可以明显改善2 T时的反向覆盖（ROW）和信噪比（SoNR $ _ {2 {rm T}} $），但会降低分辨率（RES）。由于在较薄的IL处补偿了较宽的磁写入宽度（MWW）和较窄的擦除带（EB），因此显示出磁芯宽度（MCW）对$ {rm t} _ {rm IL} $的依赖性较小。根据仿真结果，更薄的IL增强了写入器中心下方的场强，并有更多的场渗透到介质中，但是位于间隙附近的最大有效场变化很小。这些字段配置文件改善了低频时的可写性，但在中高频时影响不大。这种情况可以解释在更薄的IL情况下更好的ROW，更低的RES和更宽的MWW。 IL越薄，交叉轨道场梯度越高，EB越窄。在较薄的IL处SoNR $ _ {2 {rm T}} $的改善是由于低频信号的增加和直流噪声的进一步降低引起的。 $ {rm t} _ {rm IL} $增加的所有记录参数在质量上与模拟结果一致。

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