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首页> 外文期刊>Magnetics, IEEE Transactions on >Room-Temperature Ferromagnetic Property in MnTe Semiconductor Thin Film Grown by Molecular Beam Epitaxy
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Room-Temperature Ferromagnetic Property in MnTe Semiconductor Thin Film Grown by Molecular Beam Epitaxy

机译：分子束外延生长MnTe半导体薄膜的室温铁磁性能

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摘要

MnTe layers of high crystalline quality were successfully grown on Si(111) and Al$_{2}$O$_{3}$(0001) substrates by molecular beam epitaxy. We have investigated the structure, magnetic and electric transport properties of MnTe layers by using X-ray diffraction (XRD), superconducting quantum interference device (SQUID) magnetometer, physical properties measurement system (PPMS), and X-ray photoelectron spectroscopy (XPS). Characterization of MnTe layers on Si(111) and Al $_{2}$O $_{3}$(0001) substrates by X-ray diffraction (XRD) revealed a hexagonal structure of polycrystalline growth for MnTe/Si(111) and epitaxial growth for MnTe/Al$_{2}$ O$_{3}$ (0001), respectively. Investigation of magnetic properties for MnTe layers showed ferromagnetic properties above room temperature unlike antiferromagnetic bulk MnTe materials. The great irreversibility between zero-field-cooling and field-cooling magnetization were observed. Apparent ferromagnetic hysteresis loops are measured at room temperature. In electro-transport measurements, the temperature dependence of resistivity revealed a noticeable semiconducting behaviors and showed a conduction via variable range hopping (VRH) at low temperature. From XPS results, we assume that the origin of ferromagnetism in samples may be due to the breaking of superexchange antiferromagnetic correlations between Mn spin moments arising from Tellurium vacancies.
机译：通过分子束外延成功地在Si（111）和Al $ _ {2} $ O $ _ {3} $（0001）衬底上成功生长了高结晶质量的MnTe层。我们已经使用X射线衍射（XRD），超导量子干涉仪（SQUID）磁力计，物理性质测量系统（PPMS）和X射线光电子能谱（XPS）研究了MnTe层的结构，磁和电传输性质。通过X射线衍射（XRD）对Si（111）和Al $ _ {2} $ O $ _ {3} $（0001）衬底上的MnTe层进行表征，揭示了MnTe / Si（111）的多晶生长的六边形结构和MnTe / Al $ _ {2} $ O $ _ {3} $（0001）的外延生长。 MnTe层的磁性研究表明，与反铁磁性块状MnTe材料不同，室温以上具有铁磁性。零磁场冷却和磁场冷却磁化强度之间存在很大的不可逆性。在室温下测量表观铁磁磁滞回线。在电传输测量中，电阻率的温度依赖性显示出显着的半导体行为，并在低温下通过可变范围跳变（VRH）显示出导电性。根据XPS结果，我们假设样品中铁磁性的起源可能是由于碲空位引起的Mn自旋矩之间超交换反铁磁相关性的破坏。

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