Atomic-Level Investigation for Surface Characteristics in a Co-Cu Multilayer System: Molecular Dynamics Simulation

Kim B.-H.; Chung Y.-C.

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Atomic-Level Investigation for Surface Characteristics in a Co-Cu Multilayer System: Molecular Dynamics Simulation

机译：铜铜多层系统表面特性的原子级研究：分子动力学模拟

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Using molecular dynamics simulation, the growth behavior of Co atoms on Cu substrates for two different crystallographic orientations, (001) and (111), was extensively investigated. The surface roughness became noticeably higher during 20-monolayer (ML) deposition of Co thin-film on the Cu(111) substrate compared to the case of the Cu(001) substrate. It was found that the high diffusivity of Co adatoms on Cu(111) enhanced the atomic lateral movement, and the deposited Co adatoms could be agglomerated easily. The different growth behavior could be successfully explained in terms of the lateral atomic displacement and local acceleration energy.

机译：使用分子动力学模拟，针对两种不同的晶体学取向（001）和（111），研究了Co原子在Cu衬底上的生长行为。与Cu（001）基板的情况相比，在Cu（111）基板上20层（ML）的Co薄膜沉积过程中，表面粗糙度明显更高。结果发现，Co原子在Cu（111）上的高扩散性增强了原子的横向运动，并且沉积的Co原子易于团聚。可以通过横向原子位移和局部加速能成功地解释不同的生长行为。

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《IEEE Transactions on Magnetics》 |2008年第2008期|p.2903-2906|共4页
作者
Kim B.-H.; Chung Y.-C.;
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正文语种 eng
中图分类磁性材料、铁氧体;计量学;
关键词
Co/Cu multilayer system; growth morphology; molecular dynamics simulation; thin films;

机译：Co / Cu多层体系;生长形态;分子动力学模拟;薄膜;

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Atomic-Level Investigation for Surface Characteristics in a Co-Cu Multilayer System: Molecular Dynamics Simulation

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