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首页> 外文期刊>IEEE Transactions on Magnetics >Effect of Oxygen Concentration on Characteristics of NiO $_{rm x}$-Based Resistance Random Access Memory
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Effect of Oxygen Concentration on Characteristics of NiO $_{rm x}$-Based Resistance Random Access Memory

机译:氧浓度对NiO $ _ {rm x} $基电阻随机存取存储器特性的影响

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摘要

The resistance bistability and the switching effect has been systematically studied in nickel oxide films with variable oxygen concentrations. Both the switching bias voltage and the resistance ratio of RESET to SET were found to be strongly concentration dependent. Meanwhile, the electrical characteristics can be exactly examined by an Schottky emission. By means of mathematical fitting, the resistance bistability seems to be related to the alternating of dielectric constant and the barrier height. Furthermore, the room temperature cycle endurance with a distinguishable operation window was found to exceed 800. This indicates that the nickel oxide has the potential to be a promising material on resistance random access memory
机译:已经在具有可变氧浓度的氧化镍膜中系统地研究了电阻双稳态和开关效应。发现开关偏置电压和RESET与SET的电阻比都与浓度密切相关。同时,可以通过肖特基发射来精确地检查电特性。通过数学拟合,电阻双稳态似乎与介电常数和势垒高度的交替有关。此外,发现具有可区分的操作窗口的室温循环耐久性超过800。这表明氧化镍有可能成为电阻随机存取存储器上有希望的材料。

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