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首页> 外文期刊>IEEE Transactions on Magnetics >The Study of Fe83Ga17 Films act as Magnetostrictive Actuator on PZT Substrate
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The Study of Fe83Ga17 Films act as Magnetostrictive Actuator on PZT Substrate

机译：Fe 83 Ga 17 薄膜在PZT衬底上起磁致伸缩致动器作用的研究

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摘要

The properties of Fe-Ga thin films on PZT substrate were investigated in this paper. In the Fe-Ga/PZT (ME) devices the Fe-Ga magnetostrictive films act as a driver, therefore it should exhibit a good magnetic and mechanical properties. During sputtering, Ar pressure was changed and Fe-Ga thin films were obtained. It is shown that there is a strong relationship between the gas pressure and film adherence, conductivity, magnetic, and mechanical properties of Fe-Ga thin films. We found that the Fe-Ga/PZT devices with high Young's modulus and high permittivity also performance good in the ME coupling test. The ME coefficient was 0.17 V/cm Oe at resonance frequency, although the thickness of Fe-Ga film only was about 300 nm.
机译：研究了PZT衬底上的Fe-Ga薄膜的性能。在Fe-Ga / PZT（ME）器件中，Fe-Ga磁致伸缩膜充当驱动器，因此它应表现出良好的磁性和机械性能。在溅射期间，改变Ar压力并获得Fe-Ga薄膜。结果表明，Fe-Ga薄膜的气压与薄膜附着力，电导率，磁性和机械性能之间存在很强的关系。我们发现具有高杨氏模量和高介电常数的Fe-Ga / PZT器件在ME耦合测试中也表现良好。尽管仅Fe-Ga膜的厚度约为300nm，但在共振频率下的ME系数为0.17V / cm Oe。

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