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首页> 外文期刊>IEEE Transactions on Magnetics >Effect of Finite Tunneling Magnetoresistance for the Switching Dynamics in the Spin Transfer Torque Magnetic Tunneling Junctions
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Effect of Finite Tunneling Magnetoresistance for the Switching Dynamics in the Spin Transfer Torque Magnetic Tunneling Junctions

机译：有限隧穿磁阻对自旋传递转矩磁隧穿结中切换动力学的影响

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摘要

We investigate the effect of tunneling magnetoresistance (TMR) on the spin transfer-torque (STT) switching behaviors in magnetic tunneling junctions. In most of the micromagnetic simulations for STT switching, a uniform current density has been assumed, which is not realistic in the high TMR devices. The local STT is proportional to the local current density, and the local current density will be determined by the local resistivity. Since higher than 150% of TMR values is required in the real STT-magnetoresistive random access memory devices, the local resistance is dramatically changed as a function of the relative spin orientation between the fixed and free layers under the constant voltage operation mode. By employing non-uniform current density in STT switching simulations using the “embedded object-oriented micromagnetic framework” scheme, we found that the details of switching behaviors such as switching time and critical current density are significantly influenced by the TMR values.
机译：我们研究了隧穿磁阻（TMR）对磁性隧穿结中自旋传递转矩（STT）开关行为的影响。在大多数用于STT开关的微磁仿真中，已经假设了均匀的电流密度，这在高TMR器件中是不现实的。局部STT与局部电流密度成比例，并且局部电流密度将由局部电阻率确定。由于在实际的STT磁阻式随机存取存储器件中需要高于150％的TMR值，因此在恒定电压工作模式下，局部电阻会根据固定层和自由层之间的相对自旋方向而发生显着变化。通过使用“嵌入式面向对象的微磁框架”方案在STT开关仿真中采用非均匀电流密度，我们发现TMR值对开关行为的细节（如开关时间和临界电流密度）有很大影响。

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