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首页> 外文期刊>IEEE Transactions on Magnetics >Effects of DC Bias Current on Behavior and Sensitivity of Thin-Film Magnetoimpedance Element
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Effects of DC Bias Current on Behavior and Sensitivity of Thin-Film Magnetoimpedance Element

机译：直流偏置电流对薄膜磁阻元件行为和灵敏度的影响

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摘要

We investigated the behaviors and sensitivity of thin-film magnetoimpedance elements having an easy axis angle of 0°-45° when applying dc bias current directly to the elements. All elements show symmetric impedance profiles with respect to the impedance axis without dc bias current, while their profiles become asymmetric with dc bias current. This appearance of the asymmetric property on the impedance profiles indicates that the shape of cross section of the element has asymmetric configuration. On the other hand, when the easy axis angle is relatively small, the sensitivity for field detection is enhanced with a small dc bias level, while a stronger bias level is required for the element with a larger easy axis angle. The obtained results show a potential to optimize the sensor properties by dc bias current with small intensity in case that design properties are not obtained in the fabrication process.
机译：我们研究了当将直流偏置电流直接施加到薄膜磁阻元件时，其轴角为0°-45°的行为和灵敏度。所有元件都相对于没有直流偏置电流的阻抗轴显示对称的阻抗曲线，而它们的剖面在直流偏置电流的情况下变得不对称。阻抗分布图上不对称特性的出现表明该元件的横截面形状具有不对称构造。另一方面，当易轴角较小时，通过较小的直流偏置电平可提高磁场检测的灵敏度，而对于易轴角较大的元件则需要较强的偏置电平。如果在制造过程中未获得设计特性，则所获得的结果表明可以通过小强度的直流偏置电流来优化传感器特性。

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