0.3–14 and 16–28 GHz Wide-Bandwidth Cryogenic MMIC Low-Noise Amplifiers

著录项

• 来源
  《IEEE Transactions on Microwave Theory and Techniques》 |2018年第11期|4860-4869|共10页
• 作者

  Eunjung Cha; Niklas Wadefalk; Per-Åke Nilsson; Joel Schleeh; Giuseppe Moschetti; Arsalan Pourkabirian; Silvia Tuzi; Jan Grahn;

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• 作者单位

  Department of Microtechnology and Nanoscience (MC2), GigaHertz Centre, Chalmers University of Technology, Güteborg, Sweden;

  Low Noise Factory AB, Güteborg, Sweden;

  Department of Microtechnology and Nanoscience (MC2), GigaHertz Centre, Chalmers University of Technology, Güteborg, Sweden;

  Low Noise Factory AB, Güteborg, Sweden;

  Low Noise Factory AB, Güteborg, Sweden;

  Low Noise Factory AB, Güteborg, Sweden;

  Department of Physics, Chalmers University of Technology, Güteborg, Sweden;

  Department of Microtechnology and Nanoscience (MC2), GigaHertz Centre, Chalmers University of Technology, Güteborg, Sweden;

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• 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  Logic gates; HEMTs; MODFETs; Cryogenics; Indium phosphide; III-V semiconductor materials;

  机译：逻辑门;HEMT;MODFET;低温;磷化铟;III-V半导体材料;