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首页> 外文期刊>IEEE Transactions on Microwave Theory and Techniques >A Class-D Tri-Phasing CMOS Power Amplifier With an Extended Marchand-Balun Power Combiner
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A Class-D Tri-Phasing CMOS Power Amplifier With an Extended Marchand-Balun Power Combiner

机译：具有扩展的Marchand-Balun功率合成器的D类三相相位CMOS功率放大器

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摘要

This article presents a power amplifier (PA) design, which consists of eight class-D PA units on a single 28-nm CMOS die and a coupled-line power combiner on printed circuit board. The PA utilizes tri-phasing modulation, which combines polar and outphasing components in a way that eliminates linearity-degrading effects of multilevel outphasing while maintaining the back off efficiency.Each PA unit contains a cascoded output stage with a 3.6-V supply voltage, and multilevel operation is enabled by ON/OFF logic circuitry. Our analysis shows that the choice of power-combiner type is vital for reducing PA supply and ground ripple and thus ensuring reliable operation.Accordingly, the power combiner is implemented with extended Marchand baluns, which consist of input transmission lines and coupled-line sections. Unlike the original Marchand balun, our new topology is feasible for implementation under the layout restrictions caused by the multiple-unit PA on a single die.Measurement results show the PA achieving a peak output power of 29.7 dBm with a 34.7% efficiency, and operation with aggregated Long Term Evolution (LTE) signals at 1.7-GHz carrier frequency is verified with bandwidths up to 100 MHz.
机译：本文介绍了一种功率放大器（PA）设计，该设计由单个28nm CMOS芯片上的八个D类PA单元和印刷电路板上的耦合线功率组合器组成。该功率放大器利用三相调制，将极性和同相分量相结合，从而消除了多相反相的线性度降低效应，同时保持了退避效率。每个功率放大器单元都包含一个具有3.6V电源电压的级联输出级，以及多级操作由开/关逻辑电路启用。我们的分析表明，选择功率组合器类型对于减少PA电源和接地纹波并确保可靠的运行至关重要。因此，功率组合器采用扩展的Marchand平衡-不平衡变换器实现，该变换器由输入传输线和耦合线部分组成。与最初的Marchand balun不同，我们的新拓扑结构可在单个裸片上由多单元PA引起的布局限制下实施，测量结果显示PA达到29.7 dBm的峰值输出功率，效率为34.7％，并且运行良好在1.7 GHz载波频率上使用聚合的长期演进（LTE）信号进行了验证，带宽高达100 MHz。

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    Aalto Univ Dept Elect & Nanoengn Espoo 02150 Finland|CoreHW Helsinki 00100 Finland;

    Aalto Univ Sch Elect Engn Dept Elect & Nanoengn Espoo 02150 Finland;

    Aalto Univ Dept Elect & Nanoengn Espoo 02150 Finland|LG Elect Turku 20520 Finland;

    Aalto Univ Dept Elect & Nanoengn Espoo 02150 Finland|CoreHW Tampere 33720 Finland;

    Tampere Univ Dept Elect Engn Tampere 33720 Finland;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    CMOS integrated circuits; Marchand balun; outphasing; power amplifiers (PA); power combiners; radio transmitters; tri-phasing;

    机译：CMOS集成电路;马尔尚巴伦;淘汰功率放大器（PA）;功率合成器;无线电发射机;三相;

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